1998
DOI: 10.1063/1.120961
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X-ray photoelectron spectroscopy study of Bi4Ti3O12 ferroelectric ceramics

Abstract: Ferroelectric Bi4Ti3O12 ceramics have been prepared by the method of reactive sintering. The ceramics exhibit good ferroelectric properties with a remanent polarization Pr=5.5×10−2 C/m2 and a coercive field Ec=3MV/m. High resolution x-ray photoelectron spectra of the atomic constituents of Bi4Ti3O12 were recorded. The obtained results indicate that oxygen vacancies are preferentially sited in the vicinity of Bi ions, in the Bi2O2 layers.

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Cited by 173 publications
(77 citation statements)
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“…18 The formation of oxygen vacancies in BLSFs results from the fragility of the Bi-O bonds, 19 which results in nominal valence states for bismuth lower than 3 + . 20 An oxygen vacancy hopping mechanism is responsible for dielectric relaxation, which is therefore a thermally activated process and exponentially dependent on temperature. The losses increased with increasing temperature.…”
Section: A Crystal Structurementioning
confidence: 99%
“…18 The formation of oxygen vacancies in BLSFs results from the fragility of the Bi-O bonds, 19 which results in nominal valence states for bismuth lower than 3 + . 20 An oxygen vacancy hopping mechanism is responsible for dielectric relaxation, which is therefore a thermally activated process and exponentially dependent on temperature. The losses increased with increasing temperature.…”
Section: A Crystal Structurementioning
confidence: 99%
“…The line shape of the O 1s core level photoemission spectra of the thin films is shown in Figures 8(a)-8(f), and it is important to remark that two peaks are clearly observed. The first peak located at the low binding energy 529.8 eV can be assigned to the Ti-O bond while the second peak located at 532.5 eV can be attributed to the oxygen bonded to bismuth [17,18]. Jovalekić et al have reported that oxygen atom in a stronger Ti-O bond carries a higher effective negative charge than in a weaker Bi-O bond [17].…”
Section: Elemental Compositionmentioning
confidence: 99%
“…The first peak located at the low binding energy 529.8 eV can be assigned to the Ti-O bond while the second peak located at 532.5 eV can be attributed to the oxygen bonded to bismuth [17,18]. Jovalekić et al have reported that oxygen atom in a stronger Ti-O bond carries a higher effective negative charge than in a weaker Bi-O bond [17]. This correlation between the effective charge of oxygen atom and the binding energy of oxygen core electrons agrees with previous reports [17,18].…”
Section: Elemental Compositionmentioning
confidence: 99%
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“…9͒ exhibits a severe fatigue failure. From recent x-ray photoelectron spectroscopy ͑XPS͒ studies of BT ceramics, 10 and ͑001͒ epitaxial thin films of SBT and BIT. 11 Park et al 11 argued that the difference in oxygen stability in the perovskite layer between SBT and BT, should be related to their distinct fatigue resistance, in addition to the universally accepted role of the ͑Bi 2 O 2 ͒ 2+ layer.…”
Section: Introductionmentioning
confidence: 99%