X-ray, optical and electrical characterization of doped nanocrystalline titanium oxide thin films

Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

“…Dopants have been estimated to be at the amount of V = 10.6%, Pd = 6.67% in Ti-V-Pd composition and Co = 15.8%, Pd = 6.9% in the case of Ti-CoPd oxides. Thicknesses of the fabricated thin films was 395 nm for TiO 2 :(V, Pd) and 495 nm for TiO 2 :(Co, Pd) thin films [8].…”

“…The thin films of oxides were fabricated by the low-pressure hot-target reactive magnetron sputtering (LP HTRS) [8]. The circular magnetron, 100 mm in diameter and 3 mm thick of titanium (purity 99.99%) disc were used.…”

“…Our recent works [8,9] have shown that fabrication of the thin films of oxides using the modified magnetron sputtering enabled to achieve a high quality TiO x and its composites with a desired type of electrical conductivity and desired optical properties. Stability of TiO 2 in harsh environment and elevated temperatures makes it an attractive TOS for many microelectronics applications.…”

“…Introduction of Pd into TiO 2 host matrix results in the changing of electrical conductivity from oxide non-conductor to oxide-semiconductor. It has been shown [8,10,11] that V and Co metal ions modify the electronic state structure of oxide what results in different type of electrical conductivity. The results of electrical measurements of current-voltage (I-V) characteristics of Me/TOS/Si structures have been outlined.…”

Structural properties of transparent Ti-V oxide semiconductor thin films

“…Mixed titanium-vanadium (Ti-V) oxide thin films were prepared by a high energy reactive magnetron sputtering (HE RMS) method [25,26]. In earlier work [18], the amorphous thin oxides were prepared from a mosaic target composed of a metallic Ti target and V pieces located on the surface of the Ti target.…”