X-ray multiple diffraction on the shallow junction of B in Si(001)

Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles

“…On the other hand, when the perfect regions become large enough (such as in a quasi-perfect crystal) to allow for intrablock scattering, the dynamical diffraction dominates. In semiconductors, even for ion-implanted ones, intra-block diffraction is generally predominant (Hayashi et al, 1997;Orloski et al, 2005). Summarizing, a Renninger scan of an Si(001) substrate using the Si(002) forbidden reflection will present the (111), (111), (111) and (111) secondary peaks, which are (i) BSD cases -essential for in-plane studies; (ii) the strongest peaks in the RS -allowing easier identification and indexing; and (iii) fundamental to evaluate lattice parameter distortions along the out-of-plane and in-plane directions through their !…”

“…This versatile and high-resolution technique has been developed and successfully applied as a three-dimensional microprobe to study crystalline materials, leading to several interesting contributions regarding semiconducting epitaxial systems in which the lattices of a layer and/or substrate can be investigated separately just by the selection of one appropriate reflection peak (Morelhã o et al, 1991(Morelhã o et al, , 1998Sun et al, 2006;Hayashi et al, 1997;Orloski et al, 2005;dos Santos et al, 2009). As the lattice symmetry plays a fundamental role in XRMD, the technique has enough sensitivity to detect subtle lattice distortions in a substrate (or layer) which originate from any symmetry change.…”

Ion-Beam-Induced Epitaxial Recrystallization Method and Its Recent Applications

“…Bragg-Surface Diffraction (BSD) (Chang, 2004) is a special diffraction case of the X-ray multiple diffraction (XRMD) technique which has become a very useful and high resolution probe to study in-plane effects in single crystals in general, and also, with several interesting contributions to semiconductor epitaxial systems (dos Santos et al, 2009;Morelhão & Cardoso, 1993;Morelhão et al, 1998;Orloski et al, 2005;Lang et al, 2010b). For a more complete understanding of the experimental results that will follow in this chapter, we briefly discuss the physical aspects of the XRMD technique.…”

Band alignment of SiO2/Si structure formed with nitric acid vapor below 500°C

“…A gate oxide layer in LSI is generally produced by thermal oxidation of Si above 800°C. The high temperature heating destroys shallow junction and possibly forms defect states [1,2]. A gate oxide layer in polycrystalline Si (poly-Si)-based TFT should be formed at low temperatures below 500°C due to the use of glass substrates, and a plasma-enhanced chemical vapor deposition (CVD) method is usually employed for the formation of a gate oxide layer [3][4][5].…”