2000
DOI: 10.1016/s0022-3697(00)00086-x
|View full text |Cite
|
Sign up to set email alerts
|

X-ray K-absorption spectra of phosphorus and sulfur in InPS 4 : experiment and theory

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2009
2009
2019
2019

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 6 publications
0
3
0
Order By: Relevance
“…The P K-edge XANES has been widely utilized to speciate P forms in material science (e.g. Najman et al, 2002;Pereira et al, 2007;Lavrentyev et al, 2000), medicine (e.g. Siritapetawee & Pattanasiriwisawa, 2008) and environmental science (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…The P K-edge XANES has been widely utilized to speciate P forms in material science (e.g. Najman et al, 2002;Pereira et al, 2007;Lavrentyev et al, 2000), medicine (e.g. Siritapetawee & Pattanasiriwisawa, 2008) and environmental science (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…Both compounds have indirect wide band gap: 2.535 eV for InPS 4 (M to Γ) and 2.706 eV for AlPS 4 (Y to S). Certainly these values are underestimated compared to the experimental ones, as in the case of InPS 4 which has an experimental gap of 3.44 eV [12]. This is a known failure of DFT attributed to the fact that this theory treats the ground state only and to the discontinuity in the exchangecorrelation potential [16].…”
Section: Electronic Structurementioning
confidence: 95%
“…On the other hand, in 1993, Bolcatto et al [11] used tight-binding method to calculate the electronic structures of the MPS 4 (M = B, Al, Ga, and In) thiophosphate family. In 2000, Lavrentyev et al [12], investigated both experimentally and theoretically X-ray absorption near edge structure (XANES) of K-absorption spectra of P and S atoms in InPS 4 and in 2003 they focused their research on the electronic structure and chemical bonding in InPS 4 compound together with Tl 3 PS 4 and Sn 2 P 2 S 6 [13]. They presented the partial electronic density of states from the experimental measurements using X-ray spectroscopy and theoretical quantum mechanical calculations, using abinitio multiple scattering FEFF8 code.…”
Section: Introductionmentioning
confidence: 99%