X-ray imaging of silicon die within fully packaged semiconductor devices

Abstract

X-ray diffraction imaging (XRDI) (topography) measurements of silicon die warpage within fully packaged commercial quad-flat no-lead devices are described. Using synchrotron radiation, it has been shown that the tilt of the lattice planes in the Analog Devices AD9253 die initially falls, but after 100 °C, it rises again. The twist across the die wafer falls linearly with an increase in temperature. At 200 °C, the tilt varies approximately linearly with position, that is, displacement varies quadratically along the die. The warpage is approximately reversible on cooling, suggesting that it has a simple paraboloidal form prior to encapsulation; the complex tilt and twisting result from the polymer setting process. Feasibility studies are reported, which demonstrate that a divergent beam and quasi-monochromatic radiation from a sealed X-ray tube can be used to perform warpage measurements by XRDI in the laboratory. Existing tools have limitations because of the geometry of the X-ray optics, resulting in applicability only to simple warpage structures. The necessary modifications required for use in situations of complex warpage, for example, in multiple die interconnected packages are specified.

X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions

“…The data indicate that there is significant strain/warpage locked in by the packaging process when the polymer cools. Such a conclusion is entirely consistent with the findings of our section topography measurements on a number of SOIC packaged silicon dies (Tanner et al, 2017(Tanner et al, , 2021. As the polymer softens above about 373 K (Tanner et al, 2021) on the rise of the package temperature, the warpage is gradually relaxed.…”

“…Such a conclusion is entirely consistent with the findings of our section topography measurements on a number of SOIC packaged silicon dies (Tanner et al, 2017(Tanner et al, , 2021. As the polymer softens above about 373 K (Tanner et al, 2021) on the rise of the package temperature, the warpage is gradually relaxed. Following failure, the polymer again hardens on cooling to room temperature, reintroducing warpage.…”

“…Following the pioneering work of Toda & Ikarashi (2010), we have shown that high-energy X-ray diffraction imaging (XRDI) can be used successfully in the transmission section topography mode to determine the long-range warpage in silicon dies, fully packaged in small outline integrated circuits (SOICs) (Bose et al, 2016;Tanner et al, 2017). Though laboratory sources can be used in certain circumstances (Meng et al, 2017;Tanner et al, 2021), synchrotron radiation provides much better data sets. Using synchrotron radiation, we demonstrated that XRDI can be used in this section topography mode under white beam conditions to measure the individual long-range warpage of stacked and interconnected chiplets (Tanner et al, 2017(Tanner et al, , 2021.…”

“…Though laboratory sources can be used in certain circumstances (Meng et al, 2017;Tanner et al, 2021), synchrotron radiation provides much better data sets. Using synchrotron radiation, we demonstrated that XRDI can be used in this section topography mode under white beam conditions to measure the individual long-range warpage of stacked and interconnected chiplets (Tanner et al, 2017(Tanner et al, , 2021.…”

Cекционные Методы Рентгеновской Дифракционной Топографии (Обзор)

“…В наш обзор не вошли результаты анализа отражения сферической волны [81] и двухволновой дифракции [82] в упруго-изогнутых пластинах Si, а также экспериментальные исследования новых почти совершенных монокристаллов и многослойных структур: ванадитов [83] и сверхрешеток InGaAs−InAlAs [84]. Применение синхротронного излучения может превратить секционную топографию в экспресс-метод неразрушающей диагностики, в частности, в метод контроля изгиба и коробления кремниевых кристаллов в полностью упакованных полупроводниковых устройствах [85].…”