1998
DOI: 10.1016/s0022-3115(97)00331-0
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X-ray diffractometry and high-resolution electron microscopy of neutron-irradiated SiC to a fluence of 1.9×1027 n/m2

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Cited by 63 publications
(40 citation statements)
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“…Above 1250°C the lattice parameter showed almost constant value which was slightly negative in change compared with the unirradiated standard. It shows that excess vacancy-type point defects existed after isochronal annealing [18]. The lattice parameter of the specimen irradiated at 735°C started to decrease at 500 -600°C.…”
Section: Resultsmentioning
confidence: 91%
See 1 more Smart Citation
“…Above 1250°C the lattice parameter showed almost constant value which was slightly negative in change compared with the unirradiated standard. It shows that excess vacancy-type point defects existed after isochronal annealing [18]. The lattice parameter of the specimen irradiated at 735°C started to decrease at 500 -600°C.…”
Section: Resultsmentioning
confidence: 91%
“…Consequently, SiC based materials are positioned as an advanced candidate material of fusion reactors. Whereas relatively many researches have been reported on neutron irradiation effects of SiC [13][14][15][17][18][19], it is still important to clarify the neutron induced defects, particularly, formed after high dose at high-temperature irradiation.…”
Section: Introductionmentioning
confidence: 99%
“…It has been observed by high-resolution electron microscopy that the interstitial dislocation loops formed on {111} habit plane in -SiC irradiated at 4:8 Â 10 26 and 1 Â 10 27 n/m. 2,4,5) Effects of helium under neutron irradiation have been studied by helium-pre-injection method or use of SiC containing 10 B. [6][7][8] Helium-bubble formation and annealing behavior in helium-ion implanted -SiC was reported by several authors.…”
Section: Introductionmentioning
confidence: 99%
“…In neutron-irradiated monolithic CVD-SiC, many dislocation loops have been observed, 11) and H. Kishimoto et al reported the formation of dislocation loops within monolithic CVD-SiC for single-ion beam irradiation. 12) From these previous studies, dislocation loops were thought to form within the SiC matrix and the SiC fiber.…”
Section: Resultsmentioning
confidence: 99%