X-ray Diffraction Topography (Imaging) of Crystals Grown from Solution: A Short Review

Tanner, B. K.

doi:10.1021/acs.cgd.2c01463

Crystal Growth & Design

2023

DOI: 10.1021/acs.cgd.2c01463

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X-ray Diffraction Topography (Imaging) of Crystals Grown from Solution: A Short Review

B. K. Tanner

Abstract: A short review of X-ray topographic studies of crystals grown from solution is presented. The dislocation configurations characteristic of such crystals are described, and Klapper's explanation in terms of minimization of the elastic energy of a dislocation per unit growth length is highlighted. It is shown that the principles apply to crystals grown not only from low temperature solution but also by hydrothermal growth and growth from fluxed melts. Recent studies of growth of protein crystals have found that … Show more

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Cited by 3 publications

References 67 publications

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Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material

Ye,

Zhang,

Huang

et al. 2024

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The silicon carbide (SiC) crystal growth is a multiple‐phase aggregation process of Si and C atoms. With the development of the clean energy industry, the 4H‐SiC has gained increasing attention as it is an ideal material for new energy automobiles and optoelectronic devices. The aggregation process is normally complex and dynamic due to its distinctive formation energy, and it is hard to study and trace back in a non‐destructive and comprehensive way. Here, this work developed a non‐destructive and deep learning‐enhanced characterization method of 4H‐SiC material, which was based on micro‐CT scanning, the verification of various optical measurements, and the convolutional neural network (ResNet‐50 architecture). Harmful defects at the micro‐level, polytypes, micropipes, and carbon inclusions could be identified and orientated with more than 96% high performance on both accuracy and precision. The three‐dimensional visual reconstruction with quantitative analyses provided a vivid tracing back of the SiC aggregation process. This work demonstrated a useful tool to understand and optimize the SiC growth technology and further enhance productivity.

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Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material

Ye,

Zhang,

Huang

et al. 2024

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Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Yao,

Sugawara,

Sasaki

et al. 2023

Journal of Applied Physics

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Load-dependent and angle-dependent nanoindentation tests were performed on a (2¯01)-oriented single-crystal β-Ga2O3 substrate to study the mechanical properties of the material. The anisotropy of the mechanical properties was examined, especially with regard to the dependence of the elastic modulus (E), hardness (H), and form of plastic deformation on the rotation angle of a Berkovich indenter with respect to the monoclinic structure. E reached a maximum value and H a minimum value when the sample was rotated to such an angle that one of the three facets of the Berkovich indenter was parallel to the [010] direction. To compare our experimental results with the theoretical calculation based on the monoclinic structure, the elastic surface of β-Ga2O3 was calculated using fourth-rank stiffness and compliance tensors and visualized in three-dimensional space. Two-dimensional sectional maps of the elastic surface were obtained for a range of crystal planes, and good agreement was obtained between the experimental observations and calculations. Plastic deformation at the indenter impressions was evaluated using scanning and transmission electron microscopy, and dislocations, cleavage, and cracks were observed. Their structure and density depended on the rotation angle. Our results clearly show a strong anisotropy of the mechanical properties of β-Ga2O3, which is very different from what is found in other compound semiconductors for power-device applications, such as GaN and 4H-SiC. This emphasizes the importance of customizing the machining process for β-Ga2O3, rather than simply using “machining recipes” for other materials.

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An Analysis of Protein Crystals Grown under Microgravity Conditions

Jackson,

Hoff,

Wright

et al. 2024

Crystals

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Microgravity has been shown to be an excellent tool for protein crystal formation. A retrospective analysis of all publicly available crystallization data, including many that have not yet been published, clearly demonstrates the value of the microgravity environment for producing superior protein crystals. The parameters in the database (the Butler Microgravity Protein Crystal Database, BμCDB) that were evaluated pertain to both crystal morphology and diffraction quality. Success metrics were determined as improvements in size, definition, uniformity, mosaicity, diffraction quality, resolution limits, and B factor. The proteins in the databases were evaluated by molecular weight, protein type, the number of subunits, space group, and Mattew’s Coefficient. Compared to ground experiments, crystals grown in a microgravity environment continue to show improvement across all metrics evaluated. General trends as well as numerical differences are included in the assessment of the BμCDB. The microgravity environment improves crystal formation across a spectrum of metrics and the datasets utilized for this investigation are excellent tools for this evaluation.

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X-ray Diffraction Topography (Imaging) of Crystals Grown from Solution: A Short Review

Cited by 3 publications

References 67 publications

Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material

Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material

Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

An Analysis of Protein Crystals Grown under Microgravity Conditions

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