X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

Kaganer, Vladimir M.; Brandt, O.; Trampert, A.; Ploog, K.

doi:10.1103/physrevb.72.045423

Cited by 201 publications

(244 citation statements)

References 42 publications

Supporting

Mentioning

212

Contrasting

Unclassified

Order By: Relevance

“…Feng et al recently performed cross-sectional TEM analysis of m-plane In 0.26 Ga 0.74 N/GaN MQWs and found that BSFs are formed within the MQWs. 23 The stripe densities along [11][12][13][14][15][16][17][18][19][20] were also determined from both SEM and AFM images, which are of the order of 1-2 Â 10 5 cm À1 . This increase in the stripe densities along [11][12][13][14][15][16][17][18][19][20] is probably related to changes in the growth conditions required for higher InN incorporation in the MQWs.…”

Section: Fig 4 (A)-(d) Ecc Images Showing Tds and Striated Featuresmentioning

confidence: 99%

“…The density of the striated features along [11][12][13][14][15][16][17][18][19][20] and also the overall surface roughness increases with InN content. This makes it difficult to identify BSFs for samples with MQWs containing more than 5% InN.…”

Section: Fig 4 (A)-(d) Ecc Images Showing Tds and Striated Featuresmentioning

confidence: 99%

“…2(a). While the stripes along [0001] (and along [11][12][13][14][15][16][17][18][19][20], discussed later) are discernible in the SE image due to their topography, on comparing the two images it becomes clear that BSFs only show observable contrast in the electron channeling contrast images. The contrast for TDs and BSFs is due to channeling; if the sample is tilted or rotated (moved away) from the channeling conditions, the TDs and BSFs disappear, confirming that these features are indeed imaged by channeled electrons.…”

mentioning

confidence: 99%

“…4,12 Amongst these substrates, the use of Si and c-LiAlO 2 are considered to be the most economically viable. In addition to c-LiAlO 2 being inexpensive, growth on (100) LiAlO 2 provides a substrate-lattice mismatch of only 1.7% and 0.3% in the [11][12][13][14][15][16][17][18][19][20] and [0001] directions of m-plane GaN, respectively. 12 Irrespective of the substrates or the growth plane employed, extended defects such as threading dislocations (TDs), stacking faults (SFs), and associated partial dislocations (PDs) are always present in the as-grown layers and have proven to be detrimental to device performance.…”

mentioning

confidence: 99%

“…17 Modified Williamson-Hall analysis is a widely used method to estimate SF densities in nonpolar GaN thin films. 18 However, the accuracy of this technique is limited to line densities above 10 4 cm À1 .…”

mentioning

confidence: 99%

See 4 more Smart Citations

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Naresh-Kumar

Mauder

Wang

et al. 2013

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

This version is available at https://strathprints.strath.ac.uk/43763/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output.Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

show abstract

Section: Fig 4 (A)-(d) Ecc Images Showing Tds and Striated Featuresmentioning

confidence: 99%

Section: Fig 4 (A)-(d) Ecc Images Showing Tds and Striated Featuresmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Naresh-Kumar

Mauder

Wang

et al. 2013

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Highly‐Sensitive Skin‐Attachable Eye‐Movement Sensor Using Flexible Nonhazardous Piezoelectric Thin Film

Kim

Chen

Wang

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

Accurate and continuous monitoring of eye movements using compact, low‐power‐consuming, and easily‐wearable sensors is necessary in personal and public health and safety, selected medical diagnosis techniques (point‐of‐care diagnostics), and personal entertainment systems. In this study, a highly sensitive, noninvasive, and skin‐attachable sensor made of a stable flexible piezoelectric thin film that is also free of hazardous elements to overcome the limitations of current computer‐vision‐based eye‐tracking systems and piezoelectric strain sensors is developed. The sensor fabricated from single‐crystalline III‐N thin film by a layer‐transfer technique is highly sensitive and can detect subtle movements of the eye. The flexible eye movement sensor converts the mechanical deformation (skin deflection by eye blinking and eyeball motion) with various frequencies and levels into electrical outputs. The sensor can detect abnormal eye flickering and conditions caused by fatigue and drowsiness, including overlong closure, hasty eye blinking, and half‐closed eyes. The abnormal eyeball motions, which may be the sign of several brain‐related diseases, can also be measured, as the sensor generates discernable output voltages from the direction of eyeball movements. This study provides a practical solution for continuous sensing of human eye blinking and eyeball motion as a critical part of personal healthcare, safety, and entertainment systems.

show abstract

Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide‐Bandgap Single‐Crystalline AlN Thin Films

Kim

Yarali

Moradnia

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

Extreme environments are often faced in energy, transportation, aerospace, and defense applications and pose a technical challenge in sensing. Piezoelectric sensor based on single-crystalline AlN transducers is developed to address this challenge. The pressure sensor shows high sensitivities of 0.4-0.5 mV per psi up to 900 °C and output voltages from 73.3 to 143.2 mV for input gas pressure range of 50 to 200 psi at 800 °C. The sensitivity and output voltage also exhibit the dependence on temperature due to two origins. A decrease in elastic modulus (Young's modulus) of the diaphragm slightly enhances the sensitivity and the generation of free carriers degrades the voltage output beyond 800 °C, which also matches with theoretical estimation. The performance characteristics of the sensor are also compared with polycrystalline AlN and single-crystalline GaN thin films to investigate the importance of single crystallinity on the piezoelectric effect and bandgap energy-related free carrier generation in piezoelectric devices for high-temperature operation. The operation of the sensor at 900 °C is amongst the highest for pressure sensors and the inherent properties of AlN including chemical and thermal stability and radiation resistance indicate this approach offers a new solution for sensing in extreme environments.

show abstract

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

Cited by 201 publications

References 42 publications

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Highly‐Sensitive Skin‐Attachable Eye‐Movement Sensor Using Flexible Nonhazardous Piezoelectric Thin Film

Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide‐Bandgap Single‐Crystalline AlN Thin Films

Contact Info

Product

Resources

About