Abstract:Single crystals of 2H and 3R niobium diselenide were grown by a chemical transport reaction. The current determinations by single crystals X-ray diffraction reveal a non-stoichiometric composition. The structures are built from Se—Nb—Se slabs with Nb in trigonal prismatic coordination whereas the extra or additional Nb atoms are located in the octahedral holes between the slabs giving rise to the formula 2H and 3R-Nb1+xSe2 with 0.07 < x < 0.118. In particular, vacancy and Nb-Nb interactions may play an i… Show more
“…Our STEM images disclose that epitaxial films of Nb 1+x Se 2 near a global x ~0.29 exhibit a nanoscale separation into 180°-stacked layers with a large number of Nb intercalants, perhaps several tens of percentage occupancy (considering the average x value), and 0°-stacked layers whose number of Nb intercalants falls close to the detection limit. Bulk studies have shown that the polytype of pristine NbSe 2 is 2H a with 180°s tacking, and that a few percent of excess Nb should stabilize the 3R polytype with 0°stacking [24][25][26][27] . Here, the situation seems to be reversed, with the 180°-stacked layers hosting a much greater number of Nb intercalants than the 0°-stacked layers.…”
Section: Discussionmentioning
confidence: 99%
“…Early studies showed that TMDCs, especially with group-5 metal atoms, i.e., M = V, Nb, or Ta, undergo complex transformations of stacking polytypes upon excess M stoichiometry 23,24 . For example, bulk samples of Nb 1+x S 2 and Nb 1+x Se 2 undergo a transition from a 2H a polytype with 180°stacking of layers to a 3R polytype with 0°stacking when x crosses a threshold around 0.03-0.07, presumably because the 3R polytype better accommodates the increasing number of Nb intercalants in its interstitial voids [24][25][26][27] . With larger values of x, polycrystalline samples with 2H a , 2H b , and 3R polytypes and Nb intercalants have been stabilized 24 , but less is known about this regime.…”
mentioning
confidence: 99%
“…In essence, the cooperative behavior of stacking and intercalation is already realized "naturally" in the rich chemistry and polytypism of M 1+x X 2 , but the mechanistic details remain hidden, and the behavior remains to be exploited for applications. To determine the precise atomic position and chemical state of the intercalants in a mixed-phase sample with various stacking configurations, cross-sectional scanning transmission electron microscopy (STEM) with sub-angstrom resolution is ideal [28][29][30][31][32][33][34][35][36] and avoids the problem of interlayer averaging present in other techniques, such as x-ray diffraction [24][25][26][27] or Raman spectroscopy 37,38 . To exploit the cooperative behavior of stacking and intercalation for technological purposes, it is useful to reproduce the previously synthesized M 1+x X 2 compounds as thin films, which offer large surface areas, precise thickness control, amenability to lithography and plentiful pathways for properties engineering 32,[39][40][41][42] .…”
Two-dimensional (2D) van der Waals (vdW) materials offer rich tuning opportunities generated by different stacking configurations or by introducing intercalants into the vdW gaps. Current knowledge of the interplay between stacking polytypes and intercalation often relies on macroscopically averaged probes, which fail to pinpoint the exact atomic position and chemical state of the intercalants in real space. Here, by using atomic-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we visualize a stacking-selective self-intercalation phenomenon in thin films of the transition-metal dichalcogenide (TMDC) Nb1+xSe2. We observe robust contrasts between 180°-stacked layers with large amounts of Nb intercalants inside their vdW gaps and 0°-stacked layers with little detectable intercalants inside their vdW gaps, coexisting on the atomic scale. First-principles calculations suggest that the films lie at the boundary of a phase transition from 0° to 180° stacking when the intercalant concentration x exceeds ~0.25, which we could attain in our films due to specific kinetic pathways. Our results offer not only renewed mechanistic insights into stacking and intercalation, but also open up prospects for engineering the functionality of TMDCs via stacking-selective self-intercalation.
“…Our STEM images disclose that epitaxial films of Nb 1+x Se 2 near a global x ~0.29 exhibit a nanoscale separation into 180°-stacked layers with a large number of Nb intercalants, perhaps several tens of percentage occupancy (considering the average x value), and 0°-stacked layers whose number of Nb intercalants falls close to the detection limit. Bulk studies have shown that the polytype of pristine NbSe 2 is 2H a with 180°s tacking, and that a few percent of excess Nb should stabilize the 3R polytype with 0°stacking [24][25][26][27] . Here, the situation seems to be reversed, with the 180°-stacked layers hosting a much greater number of Nb intercalants than the 0°-stacked layers.…”
Section: Discussionmentioning
confidence: 99%
“…Early studies showed that TMDCs, especially with group-5 metal atoms, i.e., M = V, Nb, or Ta, undergo complex transformations of stacking polytypes upon excess M stoichiometry 23,24 . For example, bulk samples of Nb 1+x S 2 and Nb 1+x Se 2 undergo a transition from a 2H a polytype with 180°stacking of layers to a 3R polytype with 0°stacking when x crosses a threshold around 0.03-0.07, presumably because the 3R polytype better accommodates the increasing number of Nb intercalants in its interstitial voids [24][25][26][27] . With larger values of x, polycrystalline samples with 2H a , 2H b , and 3R polytypes and Nb intercalants have been stabilized 24 , but less is known about this regime.…”
mentioning
confidence: 99%
“…In essence, the cooperative behavior of stacking and intercalation is already realized "naturally" in the rich chemistry and polytypism of M 1+x X 2 , but the mechanistic details remain hidden, and the behavior remains to be exploited for applications. To determine the precise atomic position and chemical state of the intercalants in a mixed-phase sample with various stacking configurations, cross-sectional scanning transmission electron microscopy (STEM) with sub-angstrom resolution is ideal [28][29][30][31][32][33][34][35][36] and avoids the problem of interlayer averaging present in other techniques, such as x-ray diffraction [24][25][26][27] or Raman spectroscopy 37,38 . To exploit the cooperative behavior of stacking and intercalation for technological purposes, it is useful to reproduce the previously synthesized M 1+x X 2 compounds as thin films, which offer large surface areas, precise thickness control, amenability to lithography and plentiful pathways for properties engineering 32,[39][40][41][42] .…”
Two-dimensional (2D) van der Waals (vdW) materials offer rich tuning opportunities generated by different stacking configurations or by introducing intercalants into the vdW gaps. Current knowledge of the interplay between stacking polytypes and intercalation often relies on macroscopically averaged probes, which fail to pinpoint the exact atomic position and chemical state of the intercalants in real space. Here, by using atomic-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we visualize a stacking-selective self-intercalation phenomenon in thin films of the transition-metal dichalcogenide (TMDC) Nb1+xSe2. We observe robust contrasts between 180°-stacked layers with large amounts of Nb intercalants inside their vdW gaps and 0°-stacked layers with little detectable intercalants inside their vdW gaps, coexisting on the atomic scale. First-principles calculations suggest that the films lie at the boundary of a phase transition from 0° to 180° stacking when the intercalant concentration x exceeds ~0.25, which we could attain in our films due to specific kinetic pathways. Our results offer not only renewed mechanistic insights into stacking and intercalation, but also open up prospects for engineering the functionality of TMDCs via stacking-selective self-intercalation.
We report on the synthesis of self-intercalated Nb1+xSe2 thin films by molecular beam epitaxy. Nb1+xSe2 is a metal-rich phase of NbSe2 where additional Nb atoms populate the van der Waals gap. The grown thin films are studied as a function of the Se to Nb beam equivalence pressure ratio (BEPR). X-ray photoelectron spectroscopy and x-ray diffraction indicate that BEPRs of 5:1 and greater result in the growth of the Nb1+xSe2 phase and that the amount of intercalation is inversely proportional to the Se to Nb BEPR. Electrical resistivity measurements also show an inverse relationship between BEPR and resistivity in the grown Nb1+xSe2 thin films. A second Nb-Se compound with a stoichiometry of ∼1:1 was synthesized using a Se to Nb BEPR of 2:1; in contrast to the Nb1+xSe2 thin films, this compound did not show evidence of a layered structure.
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