2018
DOI: 10.1134/s1063782618060209
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X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method

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Cited by 5 publications
(3 citation statements)
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“…3, 𝑏]. With this assumption, the Williamson-Hall dependence makes it possible to determine the upper limit of the 𝐷 aver values and the lower limit of the 𝜀 values [62]. If we assume the Gaussian shape of diffraction lines, the lower limit for 𝐷 aver and the upper limit for 𝜀 can be found.…”
Section: Experimental Results and Their Discussionmentioning
confidence: 99%
“…3, 𝑏]. With this assumption, the Williamson-Hall dependence makes it possible to determine the upper limit of the 𝐷 aver values and the lower limit of the 𝜀 values [62]. If we assume the Gaussian shape of diffraction lines, the lower limit for 𝐷 aver and the upper limit for 𝜀 can be found.…”
Section: Experimental Results and Their Discussionmentioning
confidence: 99%
“…Plot Williamson-Hall merupakan teknik yang saat ini paling banyak digunakan untuk menganalisis pelebaran puncak difraksi sinar-x [11][12][13][14][15][16][17][18]. Prinsip metode ini pada sampel padatan logam adalah pelebaran puncak difraksi sinar-x (B, dalam radian) diakibatkan oleh adanya efek regangan kisi.…”
Section: Plot Williamson-hallunclassified
“…Plot Williamson-Hall merupakan teknik yang saat ini paling banyak digunakan untuk menganalisis pelebaran puncak difraksi sinar-x (Kulkarni dan Mathad, 2018;Pushkarev, Grekhov dan Zenchenko, 2018;Aarif Ul Islam dan Ikram, 2019;Erdoğan, 2019;Kafashan, 2019;Madhavi, 2019;Norouzzadeh dkk., 2020;Dey dan Das, 2021). Prinsipnya adalah pelebaran puncak difraksi sinar-x merupakan gabungan antara efek ukuran kristalit dan efek regangan kisi.…”
Section: Plot Williamson-hallunclassified