X-ray absorption near-edge studies of BaBiO₃, BaBi_1-xPb_xO₃and Ba_1-xK_xBiO₃systems

Abstract

AbstrPet me valencesate of Bi in pure and doped (F'b. K) B a B i a has been delermined by x-ray absorption near-edge srmnure (XANES) spenmscopy. in all materials l k Bi valence is found U) be close U) IV. A dispmpnionation of Bi(1V) into Bi(ll1) and Bi(V) is not indicated by analysis of the XANES daLz The valence sue of F'b is also found U) be IV in BaBir-,Pb,O~.

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

“…BaBiO 3 shows, at room temperature, a distorted perovskite lattice with a monoclinic unit cell (I2/m) characterized by two different B sites, occupied, respectively, by Bi 3+ and Bi 5+ . Xray photoemission [8] and X-ray absorption spectroscopy [9] point to a minimal charge transfer between the two Bi sites.…”

Preparation and electrical properties of perovskite ceramics in the system BaBi1−xSbxO3 (0≤x≤0.5)

“…BaBiO 3 shows a distorted perovskite lattice with a monoclinic unit cell (I2/m) characterized by two different B sites, occupied respectively by Bi 3+ and Bi 5+ [17]. X-ray photoemission [19] and X-ray absorption spectroscopy [20] point to a minimal charge transfer between the two Bi sites. Sb 5+ and Bi 5+ are similar in the electron structure.…”

BaBiO3-doped SrTiO3-based NTC thermistors

“…BaBiO 3 shows, at room temperature, a distorted perovskite lattice with monoclinic unit cell (I2/m) characterized by two different Bi sites, occupied respectively by Bi 3+ and Bi 5+ . X-ray photoemission [16] and X-ray absorption spectroscopy [17] indicate a minimal charge transfer between Bi(I) and Bi(II) cations.…”