X–<i>ᵞ</i>-Ray Spectroscopy With a CdTe Pixel Detector and SIRIO Preamplifier at Deep Submicrosecond Signal-Processing Time

Sammartini, M.; Gandola, M.; Mele, F.; Garavelli, Bruno; Macera, D.; Pozzi, P.; Bertuccio, G.

doi:10.1109/tns.2020.3037407

Cited by 10 publications

(7 citation statements)

References 34 publications

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“…CZT detectors allow the system to operate on a longer time scale without the need of resetting the high-voltage detector bias, with clear benefit from the reduction of the acquisition dead time associated with the high-voltage bias reset transient. Within this work, we will show that the energy resolution of CZT linear array detectors with quasi-ohmic contacts, when properly coupled with custom low-noise front-end electronics, can be dramatically improved, reaching comparable performance to what has been previously demonstrated with Schottky CdTe detector [ 7 ], in the application of room temperature ERPC systems, even with short pulse processing times (<100 ns). Using a 0.25 mm pitch CZT pixel, with 25 µm inter-pixel gap, and SIRIO charge sensitive amplifier [ 13 , 14 ] we measured an optimum full-width at half maximum (FWHM) of 576 eV (0.97%) on the

Am 59.5 keV line at room temperature (+20 °C), with 222 eV FWHM (20.5 el.…”

Section: Introductionmentioning

confidence: 77%

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Advances in High-Energy-Resolution CdZnTe Linear Array Pixel Detectors with Fast and Low Noise Readout Electronics

Mele

Quercia

Abbene

et al. 2023

Sensors

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Radiation detectors based on Cadmium Zinc Telluride (CZT) compounds are becoming popular solutions thanks to their high detection efficiency, room temperature operation, and to their reliability in compact detection systems for medical, astrophysical, or industrial applications. However, despite a huge effort to improve the technological process, CZT detectors’ full potential has not been completely exploited when both high spatial and energy resolution are required by the application, especially at low energies (<10 keV), limiting their application in energy-resolved photon counting (ERPC) systems. This gap can also be attributed to the lack of dedicated front-end electronics which can bring out the best in terms of detector spectroscopic performances. In this work, we present the latest results achieved in terms of energy resolution using SIRIO, a fast low-noise charge sensitive amplifier, and a linear-array pixel detector, based on boron oxide encapsulated vertical Bridgman-grown B-VB CZT crystals. The detector features a 0.25-mm pitch, a 1-mm thickness and is operated at a −700-V bias voltage. An equivalent noise charge of 39.2 el. r.m.s. (corresponding to 412 eV FWHM) was measured on the test pulser at 32 ns peaking time, leading to a raw resolution of 1.3% (782 eV FWHM) on the 59 keV line at room temperature (+20 °C) using an uncollimated 241Am, largely improving the current state of the art for CZT-based detection systems at such short peaking times, and achieving an optimum resolution of 0.97% (576 eV FWHM) at 1 µs peaking time. The measured energy resolution at the 122 keV line and with 1 µs peaking time of a 57Co raw uncollimated spectrum is 0.96% (1.17 keV). These activities are in the framework of an Italian collaboration on the development of energy-resolved X-ray scanners for material recycling, medical applications, and non-destructive testing in the food industry.

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Am 59.5 keV line at room temperature (+20 °C), with 222 eV FWHM (20.5 el.…”

Section: Introductionmentioning

confidence: 77%

“…into products with thick or heavy packages (glass jar, tin can, etc.) [ 5 , 6 , 7 , 8 ] or in the identification and classification of plastics and electronic waste in material recycling processes [ 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Advances in High-Energy-Resolution CdZnTe Linear Array Pixel Detectors with Fast and Low Noise Readout Electronics

Mele

Quercia

Abbene

et al. 2023

Sensors

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“…43 It has been previously observed and reported that the incomplete charge collection, as a ballistic deficit effect, gives rise to a tail in the left-hand side of the photopeaks. 28,44 Even though no such low-energy shoulder was observed in the spectra presented in Figs. 10 and 11, the presence of incomplete charge collection noise cannot be entirely excluded; when its contribution is smaller than the other noise sources, it can be described as a Gaussian source and it may only result in the broadening of the photopeak, as it was the case for the 6 μm thick i layer AlInP detector reported in Ref.…”

Section: Journal Of Applied Physicsmentioning

confidence: 83%

The response of thick (10 μm) AlInP x-ray and γ-ray detectors at up to 88 keV

Lioliou

Butera

Krysa

et al. 2021

Journal of Applied Physics

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“…This noise component can be significant in system using compound semiconductor detectors such as CdTe and CdZnTe because of the low mobility of holes [68], but also using very thick high purity germanium because of the relatively long charge collection time.…”

Section: ) Charge Induction Electronic Noisementioning

confidence: 99%

“…It is important to highlight that the trapping/induction noise, quantified by ( 30) is a complex function of 𝐸𝐸𝑁𝑁𝐶𝐶 𝐸𝐸𝐼𝐼𝑖𝑖 because the 𝑝𝑝𝐹𝐹𝐹𝐹𝐹𝐹 𝐸𝐸𝐸𝐸𝑛𝑛 strongly depends on ENCENF itself as demonstrated in [55]. The effect of noise related to the signal charge transport, both trapping-detrapping and induction, can be easily observed in detectors based on some compound semiconductors, as CdTe and CdZnTe, in which the density of defects is high, and the hole mobility is relatively low [68]. Figure 5 shows the 59.54 keV spectral line from 241 Am acquired with a CdTe detector coupled to a custom low-noise preamplifier [45].…”

Section: ) Charge Transport Electronic Noise: Experimentalmentioning

confidence: 99%

Electronic Noise in Semiconductor-Based Radiation Detection Systems: A Comprehensive Analysis With a Unified Approach

Bertuccio,

Mele

2023

IEEE Trans. Nucl. Sci.

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The electronic noise is a key-issue during the phases of design, integration and characterization of a detection system for ionizing radiation, as it determines both its ultimate and actual performances. The precise identification and quantification of all noise sources and associated components allow to implement specific strategies for their control and minimization during the system design and manufacturing phases, to disentangle all noise contributions, and to verify their correspondence with the expectations during the system characterization. An effective approach to the electronic noise problem requires to consider in detail all the parts of the detection system but it is not so rare to still observe that the electronic noise is erroneously confused or interpreted as the noise of the electronics or as the quadratic sum of the electronics' and detector's noise, usually reducing the latter to that one associated to its dark current only. In this paper, a detailed analysis of the noise model of a radiation detection system employing a semiconductor detector is presented using a unified approach which takes into account all sources and causes of electronic noise and their reciprocal interaction. The noise related to the generation, transport and loss of the signal charge in the detector are analyzed in detail and, in particular, the charge trapping and detrapping processes, showing how their contributions could be not negligible even in detectors based on high purity semiconductors. The unified approach allows to disclose the interplay between the detector, the interconnection and the frontend electronics showing that some noise contributions cannot be attributed exclusively to a single part, but it is correct to refer to them as system noises. Several examples taken from experimental data are presented and discussed and a method to determine the dielectric noise introduced by the interconnection and the detector is described. The concept of Equivalent Noise Energy is formalized revealing how it is useful to compare systems employing detectors made with different semiconductors and eventually affected by charge trapping. The analysis is developed assuming semiconductor detectors but can be easily applied to system using other types of radiation detectors.

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X–ᵞ-Ray Spectroscopy With a CdTe Pixel Detector and SIRIO Preamplifier at Deep Submicrosecond Signal-Processing Time

Cited by 10 publications

References 34 publications

Advances in High-Energy-Resolution CdZnTe Linear Array Pixel Detectors with Fast and Low Noise Readout Electronics

Advances in High-Energy-Resolution CdZnTe Linear Array Pixel Detectors with Fast and Low Noise Readout Electronics

The response of thick (10 μm) AlInP x-ray and γ-ray detectors at up to 88 keV

Electronic Noise in Semiconductor-Based Radiation Detection Systems: A Comprehensive Analysis With a Unified Approach

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