X-Band Robust Current-Shared GaN Low Noise Amplifier for Receiver Applications

Kim, Bumjin; Gao, Weixiang

doi:10.1109/csics.2016.7751081

Cited by 23 publications

(4 citation statements)

References 5 publications

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“…Marco et al [39] have demonstrated an LNA working in Xband with noise figures of 1.3 dB and peak gain of 27 dB at 0.25 μm technology node. Another Xband GaNbased LNA has been demonstrated by Bumjin et al [40] using a currentshared topology for minimizing DC current consumption whilst providing a noise figure of 2.5 dB and gain of 25 dB. Lee et al [41], demonstrated a minimum noise figure of 0.98 dB for a 0.25 μm Gate HEMT with an associated gain of 8.97 dB at 18 GHz and justify the suitability of AlGaN/GaN HEMTs for lownoise as well as highpower amplifiers.…”

Section: Introductionmentioning

confidence: 99%

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

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This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T -Gate, and the π -Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author's knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π -Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π -Gate and 77% for asymmetric recessed π -Gate in comparison to their T -Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T -Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π -Gate AlGaN/ AlN/GaN HEMTs for low noise and high gain applications.

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Section: Introductionmentioning

confidence: 99%

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

Silicon

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“…Technological progress has become an obsession of universities and industrial companies, resulting in the development of a large number of broadband low-noise amplifier architectures [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

High Gain Cascaded GaAs-pHEMT Broadband Planar Low Noise Amplifier for WiMAX-802.16b Applications

Bakkali

Touhami

Elhamadi

2021

Lecture Notes in Electrical Engineering

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Low noise amplifiers are essential structures in telecommunications systems. The problem of LNAs in planar technology is the difficulty of having a flat gain with a low noise figure in a wide bandwidth. In this work, we focus on the design of a broadband low noise amplifier for WiMAX-802.16d applications using GaAs-pHEMT ATF-35176 of Avago technologies. The three-stage cascade configuration mounted on an FR-4 substrate is used and provides a high gain, with an average value of 34.3 dB and a low noise figure of 0.95 ± 0.1 dB with a power consumption of 417 mW. The total die size is 9.5 × 2 cm 2 .

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“…9 Another X-band GaN MMIC LNA uses a current-sharing 3 cascade stage coupled with capacitors and provided a gain of 25 dB with NF of 2.5 dB. 10 As an attempt to reduce the trade-off between linearity, gain and noise figure, the proposed hybrid LNA combines between inter-stage matching 11 and independent biasing 12 in a cascode topology. 13 The inter-stage matching maintains the power transfer and bandwidth while optimizing the bias of the stages.…”

Section: Introductionmentioning

confidence: 99%

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

Jarndal

Bassal

2018

Int J RF Microw Comput Aided Eng

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This article reports a Microstrip design for low noise amplifier (LNA) using a packaged commercial GaN‐on‐SiC high electron mobility transistor (HEMT). A cascode configuration with an inter‐stage matching and an independent biasing technique was used. A lumped elements design was first developed, analyzed, and simulated in ADS. Then the design was implemented using microstrip technology and simulated using the momentum EM simulation in ADS. The LNA is easy to fabricate, has a low cost, and can be easily modified for other applications. The proposed GaN LNA showed a gain of 13.5 dB with a noise figure (NF) of 3 dB from 2.8 to 3.8 GHz.

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X-Band Robust Current-Shared GaN Low Noise Amplifier for Receiver Applications

Cited by 23 publications

References 5 publications

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

High Gain Cascaded GaAs-pHEMT Broadband Planar Low Noise Amplifier for WiMAX-802.16b Applications

A broadband hybrid GaN cascode low noise amplifier for WiMax applications

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