X-band low noise amplifier using SiGe BiCMOS technology

Patel, Vaama; Axtell, H.S.; Cerny, Charles; Creech, G.L.; Drangmeister, R.; Gouker, M.A.; James, Todd; Mattamana, Aji; Mbuko, I.O.; Neidhard, R.; Nykiel, Edward; Orlando, P.; Selke, D.; Wiedemann, J.; Quach, T.

doi:10.1109/csics.2005.1531753

Cited by 10 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…최근 발표된 문헌에 따르면, SiGe BiCMOS 공정 을 이용하여 X-대역에서 2 dB 정도의 저잡음 증폭기 가 개발되었고 [2] , Ku-대역에서 5 dB 이하의 저잡음 증폭기가 개발되었다 [1], [3], [4] . [8], [10] .…”

Section: ⅰ 서 론unclassified

Design of Ku-Band BiCMOS Low Noise Amplifier

Chang¹,

Yom²

2011

The Journal of Korean Institute of Electromagnetic Engineering

View full text Add to dashboard Cite

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of 0.65 mm×0.55 mm. The pure amplifier circuit layout with the reduced size of 0.4 mm×0.4 mm without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.

show abstract

Section: ⅰ 서 론unclassified

Design of Ku-Band BiCMOS Low Noise Amplifier

Chang¹,

Yom²

2011

The Journal of Korean Institute of Electromagnetic Engineering

View full text Add to dashboard Cite

show abstract

“…Via holes, or through-wafer interconnects, for silicon technologies have also been developed [3]- [5], but most of them are used in substrate crosstalk isolations [3] and packaging [4]. Generally, most of the silicon based high frequency single-ended amplifiers have been fabricated by using filp-chip bonding to achieve low impedance of the emitter/source ground [6].…”

Section: Introductionmentioning

confidence: 99%

X-Band SiGe-MMIC Low Noise Amplifier Using Low Parasitic Capacitance Via Holes for Emitter Grounding

Nakajima

Yoshida

Ueda

et al. 2007

2007 IEEE Radio and Wireless Symposium

View full text Add to dashboard Cite

An X-band SiGe-MMIC single-ended twostage low noise amplifier (LNA) using low parasitic capacitance via holes for the emitter grounding is described. In order to obtain low impedance emitter/source ground of a silicon based single-ended amplifier, we have developed via holes which can be fabricated after the 0.35 ,um SiGeBiCMOS process. Since there are low resistivity epitaxial layers in the silicon substrate, the via hole has the large parasitic capacitance. By introducing deep trench isolations to separate the epitaxial layers around a via hole from the other area of the chip, the parasitic capacitance of a via hole can be reduced. A fabricated X-band single-ended two-stage LNA using the developed low parasitic capacitance via holes shows a gain of 21 dB, a noise figure of 4.8 dB, an IPldB of -26 dBm at 11 GHz. The power dissipation of the circuit is 19.1 mW at a 3.3 V supply voltage. The developed via holes can be useful for the silicon MMICs at the high frequency of X-band.

show abstract

Design Considerations for Low Noise Amplifier

Bansal

Sagar

2021

Inventive Systems and Control

View full text Add to dashboard Cite

X-band low noise amplifier using SiGe BiCMOS technology

Cited by 10 publications

References 6 publications

Design of Ku-Band BiCMOS Low Noise Amplifier

Design of Ku-Band BiCMOS Low Noise Amplifier

X-Band SiGe-MMIC Low Noise Amplifier Using Low Parasitic Capacitance Via Holes for Emitter Grounding

Design Considerations for Low Noise Amplifier

Contact Info

Product

Resources

About