X-Band 14W high efficiency internally-matched HFET

Mori, K.; Nishihara, Jun; Utsumi, Hiromitsu; Inoue, Akihisa; Miyazaki, Moriyasu

doi:10.1109/mwsym.2008.4633166

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…6. It is designed as an output impedance-matching network of an X-band PA, where a four-cell transistor chip [13] is assumed to be die-bonded on a metal plate and wire-bonded to the microstripline circuit on a ceramic substrate, as in the same manner as [2]. These die-and wire-bonding techniques can also be employed to realise the 'through' and 'line' configuration in Fig.…”

Section: Dut and Its Estimation Of Reflection/transmission Characterimentioning

confidence: 99%

“…A major application of the N-way power-combining network mentioned above is microwave power amplifier (PA). A PA consists of a multi-cell transistor and its N-way input and output impedance-matching (power-dividing/combining) networks [2], and is mainly characterised by its gain, output power, and efficiency. Here, it should be emphasised that these metrics heavily depend on the transmission loss and input impedance of the N-way impedance-matching network.…”

Section: Introductionmentioning

confidence: 99%

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Through‐line method for transmission/reflection estimation of N ‐way multiport power‐combining network

Uchida

Nakashima

Handa

et al. 2019

IET Microwaves, Antennas & Propagation

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A transmission/reflection estimation method based on ‘through‐line’ measurements is proposed for N‐way tree‐shaped power‐combining network, mainly used as an output impedance‐matching network of a multi‐transistor‐cell power amplifier (PA). The method can be applied when all the N branches can be seen identical to each other and are excited uniformly in‐phase, and especially useful when the input impedance of the network has a non‐resistive (reactance) component. In the proposed method, a pair of the N‐way networks is connected directly in a back‐to‐back manner (‘through’ configuration) and with transmission lines in‐between (‘line’ configuration), and their S‐parameters are measured. The transmission/reflection coefficients of single N‐way network can be estimated from the measured ‘through’ and ‘line’ S‐parameters, where in the latter the electromagnetic coupling between the transmission lines should be dealt with carefully to avoid estimation error.

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Section: Dut and Its Estimation Of Reflection/transmission Characterimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Through‐line method for transmission/reflection estimation of N ‐way multiport power‐combining network

Uchida

Nakashima

Handa

et al. 2019

IET Microwaves, Antennas & Propagation

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“…This results in degraded power performance, rather than an optimized output power. Several design techniques are studied and published to resolve this problem [10,11,12,13].…”

Section: Power Amplifier Designmentioning

confidence: 99%

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

et al. 2018

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In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 μs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz.

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