Wurtzite-Type Ferroelectrics for Microelectronic Devices: Scalability and Integration to Silicon based Ferroelectric FETs

Effect of ZnO Interfacial Seed Layer in Sol–Gel Grown ZnMgO Ferroelectric

“…Ferroelectrics are materials that exhibit spontaneous electric polarization that can be reversibly switched through the application of an electric field and offer an alternative nonvolatile memory (NVM) hardware architecture that is amenable to analog switching. , Ferroelectric random-access memory (Fe-RAM) has several advantages: rapid and energy-efficient read and write cycles, robust endurance and retention, and potential capability for brain-inspired analog devices. , Novel wurtzite-structure-based ferroelectric materials, including ZnMgO, show significant promise. These materials exhibit unusually high remanent polarization (P r ) and coercive field compared to conventional ferroelectrics, resulting in a wide memory window . Furthermore, ZnMgO is composed of all earth-abundant elements and can be deposited using sol–gel methods at very low cost. − However, the reported remanent polarization of ZnO-based ferroelectrics grown using sol–gel processing is significantly lower than that of material grown using reactive sputtering, suggesting that improved understanding of the structure–property relationship is needed to take advantage of sol–gel processing.…”