Writing and erasing data in magnetic domain wall logic systems

Abstract

We have developed magnetic elements for field-writable data input to magnetic domain wall logic circuits. The data input elements allow domain walls to be selectively nucleated while maintaining operation of other types of logic element. Here we show for two data input element designs how their performance is optimized and how each element design requires different operating conditions. Each element design is integrated with a shift register made up of a chain of logical NOT gates. A bitwise delete operation is demonstrated with one of these shift registers by controlling domain wall propagation to bring about selective domain wall pair annihilation.

Magneto-Optical Study of the Surface Reversal Process in Amorphous Glass-Coated Microwires With Positive Magnetostriction

“…Recently developed spintronic logic devices have been based on the transport of magnetic domain walls along uniaxial magnetic wires. The speed at which a domain wall is able to run through the wire is a key factor that determines the operational rate of these devices [4]. Hence, much attention is paid to find the mechanisms that allow controlling the domain wall velocity of a given wire.…”

Ferroelectric Domain Wall Injection

“…While understanding charge transport is a major element in the realization of domain wall‐based electronic devices, the other aspect of behavior that needs to be mastered is the precise control over where and when domain walls are injected into a system, and how their subsequent motion is determined. While this kind of capability has been already developed within the nanomagnetics field it is still at its nascent stage in ferroelectric and multiferroic systems.…”

Observation of field-induced domain wall propagation in magnetic nanowires by magnetic transmission x-ray microscopy

“…[3][4][5][6][7] Furthermore, domain walls can be positioned using geometrical features, e.g. corners 1,6,8,9 or notches, and interact at wire junctions. 8,9 This has led to several proposals for using domain walls in nanowire networks for memory, 10,11 logic, 8,9 and sensor 12 applications.…”