“…We are on the cusp of the emergence of a new wave of nonvolatile memory technologies that are projected to become the dominant type of main memory in the near future [1, 2, 40,54]. A key property of these new memory technologies (e.g., phase-change memory, spin-torque transfer magnetic RAM, and memristor-based resistive RAM) is their asymmetric read-write costs: Writes can be an order of magnitude or more higher energy, higher latency, and lower (per-module) bandwidth than reads [3,8,11,12,15,22,23,32,33,36,46,52]. This high cost for writes motivates the design of models that reflect this asymmetry and "write-efficient" algorithms that perform well under such models by reducing their number of writes.…”