2021
DOI: 10.1016/j.materresbull.2021.111342
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Wrinkle type nanostructured Y-doped ZnO thin films for oxygen gas sensing at lower operating temperature

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Cited by 13 publications
(5 citation statements)
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“…On the other hand, lattice constants (a and c) and d-spacing values increased for the Y-doped ZnO samples. These results are due to the substitution of the smaller Zn 2 ions by the larger Y 3 ions in the ZnO unit cell, which causes the extension for the Y-doped ZnO samples in comparison to pure ZnO [15]. Fig.…”
Section: Resultsmentioning
confidence: 96%
“…On the other hand, lattice constants (a and c) and d-spacing values increased for the Y-doped ZnO samples. These results are due to the substitution of the smaller Zn 2 ions by the larger Y 3 ions in the ZnO unit cell, which causes the extension for the Y-doped ZnO samples in comparison to pure ZnO [15]. Fig.…”
Section: Resultsmentioning
confidence: 96%
“…This is probably because of the partial substitution of Zn 2+ in the pure sample by Dy 3+ in the doped thin film and the thinner film. As a result, the additional free electrons are released into the conduction band, increasing the electrical conductivity [ 13 ]. In order to study the relaxation time as a function of temperature, the variation in the imaginary part of impedance Z” versus angular frequency at different temperatures of ZnO undoped and doped thin films are presented in Figure 5 c,d.…”
Section: Resultsmentioning
confidence: 99%
“…However, sensing devices composed of pure ZnO usually present limited specificity to gas compounds [ 11 ]. In this sense, the use of additional nanomaterials for decorating or doping ZnO is a widely adopted strategy to improve sensing properties such as selectivity and sensitivity or to reduce the optimum operating temperature [ 12 , 13 , 14 ]. Most of the research studies are centered on the use of alternative metal or metal oxide compounds for doping ZnO [ 15 ].…”
Section: Introductionmentioning
confidence: 99%
“…The past published reports on PDs indicate that in most of the PDs, GaN and silicon have been used as absorbing layers. However, due to the blurring of optical signals between neighboring pixels, cross-talk of optical signals, low band gap, poor efficiency, and high cost of these materials, researchers take interest in other semiconductors like ZnS, CdS, V 2 O 5 , CeO 2 , CuO, ZnO, etc. , Out of these semiconducting materials, ZnO is the most preferable material for making PDs because of its unique properties like wide direct band gap (∼3.37 eV), large exciton energy (60 meV), nontoxicity, transparency, and thermal stability. The most interesting property is its large excitonic binding energy of 60 meV at room temperature, which makes ZnO an efficient light emitter. Also, the crystal growth of ZnO is easier than that in most semiconductors. Due to these unique desirable properties, ZnO can be essentially used as a high-response photodetector (PD) which could be fabricated with both Schottky and ohmic contacts . However, a key issue with pristine ZnO (also with most wide-band-gap metal oxides) is that it can work for ultraviolet (UV) photodetection, as allowed by its wide-band-gap structure, while many areas require a photosensor which can detect visible light.…”
Section: Introductionmentioning
confidence: 99%
“…Due to these unique desirable properties, ZnO can be essentially used as a high-response photodetector (PD) which could be fabricated with both Schottky and ohmic contacts. 25 However, a key issue with pristine ZnO (also with most wide-band-gap metal oxides) is that it can work for ultraviolet (UV) photodetection, as allowed by its wide-band-gap structure, 26 while many areas require a photosensor which can detect visible light. Several past research works stated that doping of various transition metals in ZnO can tune its optical and optoelectronic properties.…”
Section: Introductionmentioning
confidence: 99%