2015
DOI: 10.1016/j.solmat.2015.05.036
|View full text |Cite
|
Sign up to set email alerts
|

Work function and interface control of amorphous IZO electrodes by MoO3 layer grading for organic solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
16
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
9

Relationship

1
8

Authors

Journals

citations
Cited by 38 publications
(18 citation statements)
references
References 39 publications
(40 reference statements)
1
16
0
Order By: Relevance
“…Interfaces between MHP EML and HIL or ETL have a strong influence on the EL efficiency of PeLEDs because MHPs have different optical and electronical properties with conventional organic or inorganic interlayers. MHPs have a much deeper VBM (≈5.6 eV in MAPbI 3 , and ≈5.9 eV in MAPbBr 3 ) than the workfunction (WF) of conventional transparent conductive oxide (TCO) electrodes (≈4.8 eV in ITO, ≈5.0 eV in fluorine‐doped tin oxide (FTO), ≈5.0 eV in indium zinc oxide (IZO)) and than that of hole injection materials (≈4.8 eV in PEDOT:PSS, ≈5.3–5.4 eV in NiO x ). MHP also have a CBM (≈3.6 eV in MAPbI 3 , ≈3.6 eV in MAPbBr 3 ) that is shallower than the WF of conventional metal‐oxide electron transport materials (≈4.2 eV or ≈3.7 eV in ZnO).…”
Section: Limitations To Luminescence Efficiency Of Mhps and Ledsmentioning
confidence: 99%
“…Interfaces between MHP EML and HIL or ETL have a strong influence on the EL efficiency of PeLEDs because MHPs have different optical and electronical properties with conventional organic or inorganic interlayers. MHPs have a much deeper VBM (≈5.6 eV in MAPbI 3 , and ≈5.9 eV in MAPbBr 3 ) than the workfunction (WF) of conventional transparent conductive oxide (TCO) electrodes (≈4.8 eV in ITO, ≈5.0 eV in fluorine‐doped tin oxide (FTO), ≈5.0 eV in indium zinc oxide (IZO)) and than that of hole injection materials (≈4.8 eV in PEDOT:PSS, ≈5.3–5.4 eV in NiO x ). MHP also have a CBM (≈3.6 eV in MAPbI 3 , ≈3.6 eV in MAPbBr 3 ) that is shallower than the WF of conventional metal‐oxide electron transport materials (≈4.2 eV or ≈3.7 eV in ZnO).…”
Section: Limitations To Luminescence Efficiency Of Mhps and Ledsmentioning
confidence: 99%
“…To fabricate c-ITO films with nano-scale surface roughness, an ITO and Ag graded sputtering technique was employed, as we described previously 33 34 . A direct current (DC) magnetron sputtering system with tilted multi-cathode guns was used for graded sputtering as illustrated in Figure S1.…”
Section: Methodsmentioning
confidence: 99%
“…Moreover, obtaining high quality oxide film with high transparency and conductivity often requires a high temperature that is harmful to the devices [23,27]. Therefore, several alternative approaches have been explored and proposed by many scientific groups to develop a top electrode [28,29].…”
Section: Introductionmentioning
confidence: 99%