WO3 sputtered thin films for NOx monitoring

Sberveglieri, Giorgio; Depero, Laura E.; Groppelli, S.; Nelli, P.

doi:10.1016/0925-4005(94)01563-w

Cited by 244 publications

(76 citation statements)

References 4 publications

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“…Some of them are based on principle of measuring the electrical response of the sensors [8]. These devices are very compact and cheap but they have low sensitivity [9], a long response time [10] or operate at high temperatures [11]. There is one very interesting idea to use surface plasmon resonance in chalcogenide glasses for sensing [12], which has been theoretically studied.…”

Section: Introductionmentioning

confidence: 99%

Study of the sorption properties of Ge20Se80 thin films for NO2 gas sensing

et al. 2012

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In this study we investigated the sorption ability of Ge 20 Se 80 thin films applied as active layers of quartz crystal microbalance (QCM) for NO 2 gas sensing. To identify the chalcogenide system appropriate for gas sensing, we provided data for the packing fraction of a number of chalcogenide systems and discussed their suitability. We performed Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atom force microscopy (AFM) measurements on the thin films both before and after gas absorption, which showed that the introduced gas molecules interact electrostatically with the chalcogen atoms of the host material and initiate some degree of structural changes in it. The weight change due to NO 2 gas absorption was measured by frequency change of the resonator. The absorbed mass increased monotonically with the thickness of chalcogenide films and the NO 2 gas concentration. At the conditions of our

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Section: Introductionmentioning

confidence: 99%

Study of the sorption properties of Ge20Se80 thin films for NO2 gas sensing

et al. 2012

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“…[1][2][3][4][5] It is also very sensitive to NO x exposure, and hence it is used to fabricate gas sensors. [6][7][8][9][10] Both of these applications require WO 3 to be grown in a thin film form. Various methods have been used to prepare WO 3 thin films, including thermal evaporation, 2,7,11,12 chemical vapor deposition (CVD), 9,13 sputtering, 6,8,[14][15][16][17] and pulsed laser deposition (PLD).…”

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confidence: 99%

“…[6][7][8][9][10] Both of these applications require WO 3 to be grown in a thin film form. Various methods have been used to prepare WO 3 thin films, including thermal evaporation, 2,7,11,12 chemical vapor deposition (CVD), 9,13 sputtering, 6,8,[14][15][16][17] and pulsed laser deposition (PLD). 18,19 Films prepared on glass or Si substrates usually have amorphous or polycrystalline structure and rough surfaces.…”

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Epitaxial growth of high quality WO3 thin films

et al. 2015

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We have grown epitaxial WO3 films on various single-crystal substrates using radio frequency magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on Y AlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch are discussed.

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“…In WO 3 , neighbouring octahedra are in contact only at the corners, which increases oxygen deficiency (reduction, conversion to lower oxides), common edges and surfaces are progressively formed.…”

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confidence: 99%

“…Tungsten oxide WO 3 is a very important material in some of electrical devices [1], catalyst [2], and chemical sensors [3][4][5]. The change in electrical conductivity is one of the characteristic properties of WO 3 which can vary from the wide semiconductor state (for WO 3 ), to the conductor one (for WO 2 ).…”

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Mathematical Correlation for Tungsten-Based Alloy Nanopowder to Determine the Relation between Temperature Time and Weight under Certain Temperatures

Alhazza¹

2016

JCEA

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High temperature treatment of tungsten alloy of W-5wt.% TM (transition metals, TM = Ni, Fe, Cu, Co) nanopowder was run under different temperatures to cover the oxidation rate at different temperatures. The correlation was developed for certain temperatures to find an equation for the relation between time and weight. The thermal treatment was done for different quantities at certain times. The proposed equation studies the correlation between temperature, time, and weight. For each temperature, a number of points were recorded from the measured oxidation curve. The shape of the curves is well-represented in this paper. The final results will present the highest temperature, the maximum weight, and the maximum time for full oxidation at high and low temperatures.

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WO3 sputtered thin films for NOx monitoring

Cited by 244 publications

References 4 publications

Study of the sorption properties of Ge20Se80 thin films for NO2 gas sensing

Study of the sorption properties of Ge20Se80 thin films for NO2 gas sensing

Epitaxial growth of high quality WO3 thin films

Mathematical Correlation for Tungsten-Based Alloy Nanopowder to Determine the Relation between Temperature Time and Weight under Certain Temperatures

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