1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145)
DOI: 10.1109/hitec.1998.676770
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Wire bond metallurgy for high temperature electronics

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Cited by 18 publications
(7 citation statements)
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“…Gold thick film conductors with palladium added was in the 1970s reported to slow down the intermetallic formation rate and improve the hightemperature reliability [6,8,9]. A similar effect has been obtained by introducing a nickel barrier layer at the aluminium-gold interface [10,11]. For both of these solutions, the amount of published data is very limited.…”
Section: Introductionmentioning
confidence: 85%
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“…Gold thick film conductors with palladium added was in the 1970s reported to slow down the intermetallic formation rate and improve the hightemperature reliability [6,8,9]. A similar effect has been obtained by introducing a nickel barrier layer at the aluminium-gold interface [10,11]. For both of these solutions, the amount of published data is very limited.…”
Section: Introductionmentioning
confidence: 85%
“…Al wire bonding to nickel is another alternative that has been reported as more promising for high temperatures [10,11]. Fig.…”
Section: Thick Film Ceramicmentioning
confidence: 99%
“…Wire flexure fatigue occurs because of the thermal bending stresses induced at the ends of the wirebond when the wire and module expand and contract at different rates during temperature or power cycling [10]. Fig.…”
Section: Wirebond Failurementioning
confidence: 99%
“…There can be a concern between the Al wires and the Au plating on the DBC or the copper on the DBC. However, the use of nickel plated DBC will eliminate this concern, as Al wires on Ni plated DBC have not been seen to exhibit intermetallic formation at 1000 hours at temperatures up to 350°C [92].…”
Section: Wirebondmentioning
confidence: 99%