Will zigzag graphene nanoribbon turn to half metal under electric field?

Kan, Erjun; Li, Zhenyu; Yang, Jinlong; Hou, Jie

doi:10.1063/1.2821112

Cited by 315 publications

(243 citation statements)

References 18 publications

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“…Before the calculations of our system, some tests were done on the ZGNRs, using the E ext method and the GGA approximation with the PBE functionals. Our tests showed that E ext effect obtained from the GGA was significantly larger than that from the local density approximation (LDA); this was consistent 9 with previous observations 33, 34 . For example, the critical value of E ext for half-metallicity in 16-ZGNR in our GGA calculations was ∼ 0.55 V/Å, which was much larger than that from LDA calculations (∼ 0.20 V/Å), and the difference agreed with previous works 33, 34 .…”

Section: Homogeneous External Electric Fields For Modulating Propertisupporting

confidence: 93%

Electronic and Magnetic Properties of Partially Open Carbon Nanotubes

et al. 2009

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On the basis of the spin-polarized density functional theory calculations, we demonstrate that partially-open carbon nanotubes (CNTs) observed in recent experiments have rich electronic and magnetic properties which depend on the degree of the opening. A partially-open armchair CNT is converted from a metal to a semiconductor, and then to a spin-polarized semiconductor by increasing the length of the opening on the wall. Spin-polarized states become increasingly more stable than nonmagnetic states as the length of the opening is further increased. In addition, external electric fields or chemical modifications are usable to control the electronic and magnetic properties of the system. We show that half-metallicity may be achieved and the spin current may be controlled by external electric fields or by asymmetric functionalization of the edges of the opening. Our findings suggest that partially-open CNTs may offer unique opportunities for the future development of nanoscale electronics and spintronics. *

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Section: Homogeneous External Electric Fields For Modulating Propertisupporting

confidence: 93%

Electronic and Magnetic Properties of Partially Open Carbon Nanotubes

et al. 2009

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“…Therefore, the C B @h-BN system shows half-metallicity with respect to the previously reported graphene-based systems. [24,[57][58][59][60][61][62] Such ah alf-metallic system is importantf or spintronics applications as the spin-flip transition is not possible due to thermale xcitation. [9] Further to this, we also solved band folding [63] fort he C B @h-BN systemu sing a2 2 1s upercell (128 atoms;F igure S6 c).…”

Section: C@h-bnmentioning

confidence: 99%

Ferromagnetism and Half‐Metallicity in a High‐Band‐Gap Hexagonal Boron Nitride System

Choudhuri

Pathak

2017

ChemPhysChem

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Metal‐free half‐metallicity is the subject of intense research in the field of spintronics devices. Using density functional theoretical calculations, atom‐thin hexagonal boron nitride (h‐BN)‐based systems are studied for possible spintronics applications. Ferromagnetism is observed in patterned C‐doped h‐BN systems. Interestingly, such a patterned C‐doped h‐BN exhibits half‐metallicity with a Curie temperature of approximately 324 K at a particular C‐doping concentration. It shows half‐metallicity more than metal‐free systems studied to date. Thus, such a BN‐based system can be used to achieve a 100 % spin‐polarised current at the Fermi level. Furthermore, this C‐doped system shows excellent dynamical, thermal, and mechanical properties. Therefore, a stable metal‐free planar ferromagnetic half‐metallic h‐BN‐based system is proposed for use in room‐temperature spintronics devices.

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“…The use of external electric field is known to strongly affect the electronic properties of other materials [15][16][17]. To verify the feasibility of this proposal, we carry out first principles density functional theory (DFT) calculations for model SMTJs, (Ga,Mn)As/GaAs/(Ga,Mn)As under electric field.…”

Section: Calculation Detailsmentioning

confidence: 99%

(Ga,Mn)As-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Luo

Shen

2016

Acta Phys. Pol. A

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Diluted magnetic semiconductors composed in magnetic tunnel junctions have potential applications in spintronics but the development has not been fast. The main difficulty is how to control the magnetism of diluted magnetic semiconductors. For our model semiconductor magnetic tunnel junctions, (Ga,Mn)As/GaAs/(Ga,Mn)As, we found that the magnetic coupling between the transition metal ions in each diluted magnetic semiconductor electrode of such semiconductor magnetic tunnel junctions can be switched from ferromagnetic to antiferromagnetic by the external electric field. The phenomenon suggest a possible avenue for the application of semiconductor magnetic tunnel junctions.

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Will zigzag graphene nanoribbon turn to half metal under electric field?

Cited by 315 publications

References 18 publications

Electronic and Magnetic Properties of Partially Open Carbon Nanotubes

Electronic and Magnetic Properties of Partially Open Carbon Nanotubes

Ferromagnetism and Half‐Metallicity in a High‐Band‐Gap Hexagonal Boron Nitride System

(Ga,Mn)As-Based Magnetic Tunnel Junctions under Electric Field from First Principles

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