Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells

Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki

doi:10.3938/jkps.72.622

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…After resonance voltage, the S-InGaAs valley current density comprises a longer voltage range with a minimum at V = 5.3 V, whereas the Ref-GaAs minimum valley current density is at V = 3.8 V. Moreover, the valley current density is higher for the S-InGaAs sample leading to a lower PVCR at 4 K. At reverse bias voltage, the S-InGaAs peak current density is j res = −8.9 µA/µm 2 at V res = −5.10 V, while the Ref-GaAs peak current density is j res = −51.6 µA/µm 2 at V res = −5.78 V. The heterostructure asymmetry leads to the reduction in the absolute value of the peak current density compared to forward bias, and this reduction is more pronounced for the prewell-containing heterostructure (see Ref. [31]).…”

Section: Resultsmentioning

confidence: 99%

Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

de Oliveira,

Naranjo,

Pfenning

et al. 2020

Preprint

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We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al0.6Ga0.4As resonant tunneling diodes with an In0.15Ga0.85As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without emitter prewell. Landau level splitting is observed in the electroluminescence emission from the emitter prewell enabling the extraction of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy technique provides useful insights in the charge carrier dynamics of resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques.

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Section: Resultsmentioning

confidence: 99%

Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

de Oliveira,

Naranjo,

Pfenning

et al. 2020

Preprint

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show abstract

“…The approaches presented in [12,16] are based on the expansion of the statistical density matrix in terms of the eigenvectors of the diffusion matrix for the case of a simplified Hamiltonian assuming a spatially constant effective mass distribution, which seems to be the standard model for numerical investigations of the Wigner equation, e.g. [14,[17][18][19][20][21][22]. In [23,24], the approach has been analyzed with regard to plane wave functions spanning the numerical basis, which become particular important when multiband transport has to be considered or the spatially varying effective mass has to be taken into account.…”

Section: Introductionmentioning

confidence: 99%

Subdomain-based exponential integrators for quantum Liouville-type equations

2021

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In order to describe quantum mechanical effects, the use of the von-Neumann equation is apparent. In this work, we present a unified numerical framework so that the von-Neumann equation in center-of-mass coordinates leads to a Quantum Liouville-type equation when choosing a suitable basis. In particular, the proposed approach can be related to the conventional Wigner equation when a plane wave basis is used. The drawback of the numerical methods is the high computational cost. Our presented approach is extended to allow reducing the dimension of the basis, which leads to a computationally efficient and accurate subdomain approach. Not only the steady-state behavior is of interest, but also the dynamic behavior. In order to solve the time-dependent case, suitable approximation methods for the time-dependent exponential integrator are necessary. For this purpose, we also investigate approximations of the exponential integrator based on Faber polynomials and Krylov methods. In order to evaluate and justify our approach, various test cases, including a resonant tunnel diode as well as a double-gate field-effect transistor, are investigated and validated for the stationary and the dynamic device behavior.

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“…Significant progress has been achieved in the electronic structure engineering of nanoscopic systems, allowing for a thorough characterization of the charge carrier dynamics and correlation with the optical response. This is particularly crucial in semiconductor heterostructures like resonant tunneling diodes (RTDs) − where challenging questions still pervade the physics of carrier excitation, transport, relaxation, and recombination. − In particular, mapping the thermalization gradient along the transport path and how it is affected by external factors is still a relevant topic to be characterized and understood, and optical tools are well suited for this purpose. , …”

Section: Introductionmentioning

confidence: 99%

“…This is particularly crucial in semiconductor heterostruc-tures like resonant tunneling diodes (RTDs) [1][2][3][4][5] where challenging questions still pervade the physics of carrier excitation, transport, relaxation, and recombination. [6][7][8][9][10] In particular, mapping the thermalization gradient along the transport path and how it is affected by external factors is still a relevant topic to be characterized and understood, and optical tools are well suited for that purpose.…”

mentioning

confidence: 99%

Optical Mapping of Nonequilibrium Charge Carriers

et al. 2021

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We investigate the energy relaxation segmentation in a resonant tunneling heterostructure by assessing the optical and transport dynamics of nonequilibrium charge carriers. The electrical and optical properties are analyzed using electronic transport measurements combined with electro- and photoluminescence spectroscopies in continuous-wave mode. Our results suggest that hot electron and hole populations form independent nonequilibrium systems that do not thermalize among them and with the lattice. Consequently, the carrier effective temperature changes independently at different regions of the heterostructure, with a population distribution for holes colder than for electrons.

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Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells

Cited by 6 publications

References 21 publications

Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

Subdomain-based exponential integrators for quantum Liouville-type equations

Optical Mapping of Nonequilibrium Charge Carriers

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