2012
DOI: 10.1002/adma.201202746
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Width‐Tunable Graphene Nanoribbons on a SiC Substrate with a Controlled Step Height

Abstract: An approach to fabricate large‐scale graphene nanoribbons (GNRs) with tunable ribbon widths is presented. Regular steps with variable heights from 1 to 100 nm can be prepared on a SiC substrate by a low‐pressure etching process. Graphene can be epitaxially grown only on the side walls of the steps, thereby leading to GNRs with controllable widths.

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Cited by 27 publications
(20 citation statements)
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“…29 The bottom-up growth of graphene sheets is an alternative to the mechanical exfoliation of the bulk graphite. In bottom-up processes, graphene is synthesized by a variety of methods such as chemical vapor deposition (CVD), 45,46 arc discharge, 47 epitaxial growth on SiC, 48 chemical conversion, 49 reduction of CO, 50 unzipping carbon nanotubes 51,52 and self-assembly of surfactants. 53 The CVD approach to produce graphene relies on dissolving carbon into metal surfaces, such as Ni and Cu that act as catalysts 54,55 and then forcing it to separate by cooling the metal.…”
Section: Figmentioning
confidence: 99%
“…29 The bottom-up growth of graphene sheets is an alternative to the mechanical exfoliation of the bulk graphite. In bottom-up processes, graphene is synthesized by a variety of methods such as chemical vapor deposition (CVD), 45,46 arc discharge, 47 epitaxial growth on SiC, 48 chemical conversion, 49 reduction of CO, 50 unzipping carbon nanotubes 51,52 and self-assembly of surfactants. 53 The CVD approach to produce graphene relies on dissolving carbon into metal surfaces, such as Ni and Cu that act as catalysts 54,55 and then forcing it to separate by cooling the metal.…”
Section: Figmentioning
confidence: 99%
“…Graphene has recently attracted considerable attention owing to its remarkable electronic and structural properties in many emerging application areas such as electronic devices [1-3]. However, graphene exhibits a zero band gap and nonmagnetic behavior, which limits its application in electronics and photonics [4].…”
Section: Introductionmentioning
confidence: 99%
“…As a ceramic with excellent mechanical and thermal properties [1], silicon carbide is widely used in a lage number of fields, such as porous ceramics [2,3], composite materials [4,5], microscopy technology [6], quantum research [7], nano science and technology [8] and optical components [9,10]. Sintering is the most common method in producing silicon carbide ceramic, including pressureless sintering [11,12], hot pressure sintering [13], spark plasma sintering (SPS) [14,15], hot isostatic pressing sintering (HIP) [16], reaction sintering [17] and so on.…”
Section: Introductionmentioning
confidence: 99%