Widely tunable yellow-green lasers based on the self-frequency-doubling material Yb:YAB

Dekker, Peter; Burns, Phillip; Dawes, Judith M.; Piper, James A.; Li, Jing; Hu, Xiaobo; Wang, Jing

doi:10.1364/josab.20.000706

Cited by 49 publications

(21 citation statements)

References 26 publications

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“…4 and ( 5 + 6 ) states in D 3 group and ( 4 + 5 ) and 2 6 states in C 3 group are Kramers doublets [31]. Thus, both in D 3 and in C 3 symmetry all degenerations of half integer states, except Kramers one, are lifted.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4]), microchip lasers [5], nonlinear optical crystals [5][6][7], and so on. Undoped YAl 3 (BO 3 ) 4 crystal demonstrates the largest known nonlinear optical coefficient of the Y 1−x R x M 3 (BO 3 ) 4 series of crystals [7]. These crystals have trigonal symmetry with the space group R32 (No.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper we present results of the detailed investigation of Yb 3+ absorption spectrum as a function of temperature in the concentrated YbAl 3 (BO 3 ) 4 and in the mixed Yb x Tm 1−x Al 3 (BO 3 ) 4 (x = 0.1 and 0.2) crystals. We suggest new energy level diagram, based on the experimental results obtained.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Spectroscopic properties and energy levels of Yb3+ ion in huntite structure

Malakhovskii¹,

Sukhachev²,

Gnatchenko³

et al. 2009

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Spectroscopic properties and energy levels of Yb3+ ion in huntite structure

Malakhovskii¹,

Sukhachev²,

Gnatchenko³

et al. 2009

Journal of Alloys and Compounds

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“…In particular, semiconductor laser diodes emitting at 1064 nm is important in laser display system to generate green beam by pumping the frequency conversion PPLN crystals [1,2,3]. These applications require lasers who can provide relatively high power to obtain high power conversion efficiency and high green light generation power [4].…”

Section: Introductionmentioning

confidence: 99%

High power 1060-nm super large vertical cavity semiconductor lasers

et al. 2014

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High power single-mode ridge waveguide 1060-nm semiconductor lasers are reported. The lasers consist of compressively strained double InGaAs/GaAs quantum wells and a GaAs/AlGaAs separate confinement vertical structure. A super large vertical optical cavity is employed to have a low internal loss, large optical spot size and low vertical optical divergence angle. The material composition and thickness of waveguide layers and claddings layer are optimized systematically. The active layer is detuned from center of the waveguide and thickness of cladding layers is optimized to guaranty single mode lasing of the large optical cavity. The large vertical cavity laser structure with thickness of 4 μm allows the lasers have a low internal loss of less than 0.6 /cm, a large optical spot size about 1μm and a vertical divergence angle about 20 degree. For lateral optical confinement, a double trench ridge waveguide is employed to maintain single-lateral-mode operation. Based on the optimization, 1.5 W continue wave optical power is achieved for broad area lasers with 1mm longitude cavity length. Narrow stripe ridge waveguide lasers of 1mm cavity length with single mode current and optical power of 700 mA and 340 mW is obtained. Suggestions for further improvements in terms of single mode power and applications of the high power semiconductors are discussed.

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“…We chose to investigate the operation of Yb 3+ :YAl 3 (BO 3 ) 4 (Yb:YAB) a highly efficient self-frequency-doubling crystal [8] , with wide wavelength tenability [9] . This laser has been mode-locked with some success [4] to give pulses as short as 200 fs, but exhibited instability due to the coupling of the mode-locking and self-frequency-doubling pulse-shaping mechanisms.…”

Section: Introductionmentioning

confidence: 99%