Widely tunable silicon Raman laser

Ahmadi, Mohammad; Shi, Wei; LaRochelle, Sophie

doi:10.1364/optica.423833

Cited by 25 publications

(19 citation statements)

References 35 publications

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“…In silicon, the Stokes wave has a 15.6 THz frequency detuning from the pump wave. A tuning range of 83 nm with a threshold pump power of 15 mW was reported recently in a reverse-biased single-mode silicon racetrack resonator 34 .…”

Section: Introductionmentioning

confidence: 79%

Broadband high-Q multimode silicon concentric racetrack resonators for widely tunable Raman lasers

et al. 2022

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Multimode silicon resonators with ultralow propagation losses for ultrahigh quality (Q) factors have been attracting attention recently. However, conventional multimode silicon resonators only have high Q factors at certain wavelengths because the Q factors are reduced at wavelengths where fundamental modes and higher-order modes are both near resonances. Here, by implementing a broadband pulley directional coupler and concentric racetracks, we present a broadband high-Q multimode silicon resonator with average loaded Q factors of 1.4 × 106 over a wavelength range of 440 nm (1240–1680 nm). The mutual coupling between the two multimode racetracks can lead to two supermodes that mitigate the reduction in Q factors caused by the mode coupling of the higher-order modes. Based on the broadband high-Q multimode resonator, we experimentally demonstrated a broadly tunable Raman silicon laser with over 516 nm wavelength tuning range (1325–1841 nm), a threshold power of (0.4 ± 0.1) mW and a slope efficiency of (8.5 ± 1.5) % at 25 V reverse bias.

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Section: Introductionmentioning

confidence: 79%

Broadband high-Q multimode silicon concentric racetrack resonators for widely tunable Raman lasers

et al. 2022

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“…Further improvement is expected by improving the intrinsic Q‐factor and optimizing the coupling design. [ 9 ]…”

Section: Resultsmentioning

confidence: 99%

“…[5,6] Recent development of Raman lasers based on photonic integrated microresonators have been successfully achieved with continuous-wave (CW) pumping and low power thresholds. Indeed, photonic integrated Raman lasers have been experimentally demonstrated in silicon racetrack resonators, [1,[7][8][9] silicon photonic crystals, [2] on-chip diamond resonators, [10,11] photonic aluminum nitride (AlN) microresonators, [12] lithium niobate microresonators (LN), [13,14] silicon carbide, [15] and silica microcavities, [16][17][18] which enables microscale Raman lasering with high compactness, low energy consumption, and high design freedom in photonic integrated devices. [8][9][10]12] Moreover, through a tunable directional coupler to optimize both pump and signal coupling coefficiency in the ring cavity, high-performance Raman lasering with a slope of up to 26% has been implemented.…”

Section: Introductionmentioning

confidence: 99%

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Xia

Huang

Zhang

et al. 2022

Laser & Photonics Reviews

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Photonic integrated Raman lasers have extended the wavelength range of chip-scale laser sources and have enabled applications including molecular spectroscopy, environmental analysis, and biological detection. Yet, the performance is strongly determined by the pumping condition and Raman shift value of nonlinear medias, leaving challenges to have a widely and continuously tunable Raman laser (e.g., over 100 nm). Here, photonic engineered Raman lasers based on chip-integrated chalcogenide microresonators are demonstrated. The home-developed chalcogenide photonic platform is of high nonlinearity, wide transparency, and low loss. The strong and broadband material Raman response has promised rich dynamics of Raman lasing. Indeed, both single-mode Raman lasing and a broadband Raman-Kerr comb, which are found engineered by tuning the dispersion of the chalcogenide microresonator, are demonstrated. The single-mode Raman laser, together with its cascaded modes, supports a gap-free tuning range over 140 nm, while the threshold power is as low as 3.25 mW. The results may contribute to the understanding of Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to integrated and efficient laser sources that is desired in spectroscopic applications in the infrared.

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“…The pully directional coupler can also suppress the generation of higher-order modes . Another approach using an adjustable directional coupler with a thermally tuned Mach–Zehnder interferometric structure, can help alleviate the critical dependence of the coupling ratio on the gap size in a conventional directional coupler …”

Section: Anti-stokes Raman Lasing Measurementsmentioning

confidence: 99%

“…Stimulated Raman scattering (SRS) in optical waveguides has attracted much interest − because of its potential applications in wavelength conversion , and on-chip Raman spectroscopy. − It also improves the understanding of the optical physics of high-quality-factor ( Q ) cavities in terms of Stokes Raman lasers and anti-Stokes Raman lasers. − Recent interest in integrated Raman lasers has extended to the use of machine-learning methods to design silicon Raman lasers with low threshold powers . Nonlinear wavelength conversion is widely used to produce wavelength differences from a pump laser at either longer or shorter wavelengths and typically relies on nonlinear parametric conversion. − SRS-based wavelength conversion offers additional advantages of high efficiency that can enable cascaded Raman lasing for wavelength conversion spanning a large wavelength range. ,, A SRS wavelength converter can convert the pump wavelength to both the Stokes wavelength and the anti-Stokes wavelength via the SRS and coherent anti-Stokes Raman scattering (CARS) covering a wide wavelength conversion range .…”

mentioning

confidence: 99%

Low-Threshold Continuous-Wave Anti-Stokes Raman Lasing in Silicon Racetrack Resonators

et al. 2021

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We report the first experimental observation of continuous-wave anti-Stokes Raman lasing in a reverse-biased 2.8 mm long multimode silicon racetrack resonator with high quality factors (>106) at all the pump, Stokes, and anti-Stokes wavelengths. The anti-Stokes laser has a milliwatt pump threshold power. The laser output power is linearly proportional to both the Stokes output power and the pump power. The Stokes output power becomes saturated at higher pump powers and limits the maximum output power of the anti-Stokes wave. Besides, a low-power (milliwatt pump power) all-optical wavelength converter with a wide wavelength tuning range is experimentally demonstrated via the coherent anti-Stokes Raman scattering in this multimode waveguide. The pump power is 200× lower than the previous reports with comparable Stokes/anti-Stokes power conversion efficiency. The wavelength converter can operate in the wavelength conversion range of the whole telecom band with a wavelength conversion range of about 220 nm.

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Widely tunable silicon Raman laser

Cited by 25 publications

References 35 publications

Broadband high-Q multimode silicon concentric racetrack resonators for widely tunable Raman lasers

Broadband high-Q multimode silicon concentric racetrack resonators for widely tunable Raman lasers

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Low-Threshold Continuous-Wave Anti-Stokes Raman Lasing in Silicon Racetrack Resonators

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