Wideband Switchable Sharp-Rejection Filter in Compact 3-D Heterogeneous Integration

Hou, Fanfan; Li, Liang; Shen, Yizhu; Sun, Chao; Luan, Huakai; Hu, Sanming

doi:10.1109/tcpmt.2022.3202154

Cited by 2 publications

(2 citation statements)

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“…To address the above challenging issues, researchers focus on exploring different fabrication processes to improve the integration and compactness, including multilayer printed circuit board (PCB) [3][4][5], low temperature cofired ceramic (LTCC) [6,7], silicon wafer [8][9][10][11], and other materials [12]. Multilayer PCB is often considered a low-cost technology, but it still suffers from the low integration density of electronic systems and low isolation.…”

Section: Introductionmentioning

confidence: 99%

“…In previous 3DHI switchable filter bank designs [8][9][10][11], switch chips are commonly embedded inside the HR-Si interposer cavities before interposer stacking. In addition, these works show good performances with multiple adjacent frequency bands and narrow band overlaps, which are mainly operated at several specific frequencies for active detection or known communication missions.…”

Section: Introductionmentioning

confidence: 99%

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3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications

Wang

Shu

et al. 2022

Electronics

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This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity-silicon (HR-Si) interposer wafers is presented to form both compact filter channels. Above the interdigital filter patterns fabricated on the bottom interposer wafer, deep cavities are etched in the cap interposer wafer to improve the quality factor of the filter bank. Besides the cavities, the cap interposer wafer is 35% hollow inside, which two bare dies of GaAs single-pole double-throw (SPDT) switches and two thin film resistors are attached to the bottom interposer after the wafer-to-wafer (W2W) bonding. To ensure good out-of-band performance, a 3D EM co-simulation of the switch layout at the chip level and filter patterns at the package level is applied. Measurement results show that the switchable filter bank achieves a high isolation of 50 dB and a competitive shape factor (BW30dB/BW3dB) of about 1.3. In addition, the size of the switchable filter bank is only 7.0 mm × 3.5 mm × 0.6 mm, and the weight is only 0.1 g.

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