Wideband SPDT and SP4T RF Switches using Phase-Change Material in a SiGe BiCMOS Process

Amin, Farooq; Beglin, Thomas; Edwards, Nicholas; El-Hinnawy, Nabil; Slovin, Greg; Howard, David; Nichols, D.; Young, Robert M.

doi:10.1109/ims19712.2021.9574962

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…The measured S-parameters of the RF switches used for comparison are taken directly from the manufacturers. The performance of various PCM single-pole three-throw (SP3T) switch [39], single-pole double-throw (SP2T) switch [55], [72], and single-pole single-throw switches [49], [71] is compared with various broadband microwave switches developed using commercial RF-MEMS, magnetic relay, GaAs pHEMT, mmWave switches developed in-house using SOI-MEMS [6], and commercial Silicon-CMOS, UltraCMOS SOI, and GaAs MMIC technologies. Part number of the compared devices are given in the footnotes of Table 2.…”

Section: E Comparison With State-of-the-artmentioning

confidence: 99%

“…It depends on the use case scenario or application to decide which performance parameter is the switches' primary selection criteria. The emerging PCM GeTe-based developed switches push the boundaries by offering a technology that leads to devices with broadband operation frequency, low insertion loss, and miniature die size [42], [49], [55], [71], [72]. Although, the PCM technology offers many advantages over other RF switch technologies, but it is worth highlighting one of the drawback of PCM switches, namely the power consumption during the transition state.…”

Section: E Comparison With State-of-the-artmentioning

confidence: 99%

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Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

et al. 2023

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Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

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