Wideband high power SPDT and SP3T GaN MMIC switches in low-cost overmolded plastic package

Nguyen, Tuong; Zomorrodian, Valiallah; Kywe, Thi Ri Mya

doi:10.1109/csics.2017.8240452

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…It must be noticed that the topology (serial or shunt device) plays a strong role in the linearity of the circuit (individual cell and final chip). The shunt topology allows higher power levels than what the device can handle alone, like for SPDT series-shunt topologies [5]. This last point releases constraints on sizing versus power for the transistors from first stages of the core-chip.…”

Section: D) Linearitymentioning

confidence: 99%

GaN MMIC Differential Multi-function Chip for Ka-Band Applications

Berthelot¹,

Tartarin

Viallon

et al. 2019

2019 IEEE MTT-S International Microwave Symposium (IMS)

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High data rate communications have become possible due to improvements in microelectronics, and is based on new topological concepts of architecture. The development of 5G networks using the Ka-band is one of the challenges for new telecommunication systems based on individually controlled active antennas (AESE). The control system is usually developed using silicon processes but this approach does not allow a fully embedded transceiver as the front-end module must be connected to the core-chip module and to its digital control interface. With the GaN power technologies providing high PAE, an interesting issue consists in designing a fully integrated GaN MMIC multifunction chip for highly integrated systems. This work presents, for the first time, a GaN attenuator-phase shifter covering a wide range of frequencies from 30 GHz to 40 GHz. Moreover, this circuit is a balanced version of the attenuator-phase shifter to target an improved linearity and to take full advantage of GaN power amplifiers.

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Section: D) Linearitymentioning

confidence: 99%

GaN MMIC Differential Multi-function Chip for Ka-Band Applications

Berthelot¹,

Tartarin

Viallon

et al. 2019

2019 IEEE MTT-S International Microwave Symposium (IMS)

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“…Moreover, the wide bandgap of GaN ensures good hardness features for LNA, allowing the elimination of the limiter usually inserted to counteract effects of potential jammer threats. About the path selection circuitry, switches featured by power handling up to 100 W and insertion losses reaching 0.8 dB operating from the S‐ to the Ka‐bands can be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

High power‐handling SPDT switch in 0.25‐µm GaN technology

Polli

Palomba

Colangeli

et al. 2018

Int J RF Microw Comput Aided Eng

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An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31‐dB isolation together with an insertion loss less than 0.5 dB both in Rx‐ and Tx‐mode.

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