Wideband Electroabsorption Modulator for Microwave Photonics

Yu, Peter T.

doi:10.21236/ada444215

Cited by 1 publication

(1 citation statement)

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“…EAMs using multiple-quantum-well (MQW) active layers have been popular as they typically possess a large absorption-coefficient change with applied electric field. Various research programs have furthered the development of EAMs by improving the power handling, bandwidth, linearity and insertion losses [1][2][3] .…”

Section: Introductionmentioning

confidence: 99%

Fabrication Process for Electroabsorption Modulators

Johns¹,

Bussjager²

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. SPONSOR/MONITOR'S ACRONYM(S) 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)AFRL/SNDP 25 Electronic Parkway Rome NY 13441-4515 SPONSORING/MONITORING AGENCY REPORT NUMBER AFRL-SN-RS-TR-2007-57 DISTRIBUTION AVAILABILITY STATEMENT APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. PA# 07-083 SUPPLEMENTARY NOTES ABSTRACTThis report focuses on the fabrication aspects of Electroabsorption Modulator (EAM) devices developed by the University of California at San Diego (UCSD). Air Force Research Laboratory (AFRL) SNDP personnel learned the processes directly at UCSD with the primary goal of transitioning the process to AFRL/SNDP. EAMs were designed to operate at 1550 nm using Indium Phosphide (InP) technology with semi-insulating wafers purchased from Tee Wel (Taiwan). Most of the process uses negative photoresist and is an 8-step mask procedure. The final metal coating is most critical to making robust n-and p-contacts. Without good metallization, wire bonding into a package fails. This report acts as a recipe aid to EAM device fabrication. Various times, levels, temperature, etc., quoted in this report were determined after careful calibration studies for each processing step and should only be used as guide values. Parameters change as materials age and machines change.

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Section: Introductionmentioning

confidence: 99%

Fabrication Process for Electroabsorption Modulators

Johns¹,

Bussjager²

2007

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Wideband Electroabsorption Modulator for Microwave Photonics

Cited by 1 publication

References 3 publications

Fabrication Process for Electroabsorption Modulators

Fabrication Process for Electroabsorption Modulators

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