Wideband compact antenna for K-band applications

Grzeskowiak, Marjorie; Descamps, Philippe; Vindevoghel, J.

doi:10.1049/el:20000012

Cited by 6 publications

(2 citation statements)

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“…It can be noted that the bandwidth measured for a single electromagnetically-coupled resonator is very wide (2.3 GHz) compared with a 1 element proximity-fed antenna (400 MHz)[2].They have been measured at 24.985 GHz. We can see in…”

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confidence: 93%

“…In order to avoid bad connections due to air gaps and provide an accurate feeding position the antennas are fully realised by means of technological photolithography processes. A microwave proximity-fed antenna [2] is realised through the technological optical processes and a bandwidth of 400 MHz is obtained for a single resonator at 26 GHz. This paper reports on a monolithical electromagnetically-coupled antenna on GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

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Monolithic Microwave Integrated GaAs Electromagnetically-Coupled Antenna

Grzeskowiak

Vindevoghel

2000

30th European Microwave Conference, 2000

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Monolithic antenna on GaAs to be used in miniature active sensors is presented. After a first study of technological processes and the characterisation of various substrates in K-band, the feasibility of an antenna, operating in K-band, electromagnetically-coupled and integrated on GaAs by monolithical realisation, has been demonstrated. A low profile (1mm) and wide bandwidth (2.3 GHz around 25 GHz) antenna is obtained.

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mentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Monolithic Microwave Integrated GaAs Electromagnetically-Coupled Antenna

Grzeskowiak

Vindevoghel

2000

30th European Microwave Conference, 2000

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Formation of β-Be₃N₂ nanocrystallites in Be-implanted GaN

Peng

Saleem

Wei

et al. 2021

Mater. Res. Express

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A small Be ion dose of 5 × 1014 cm−2 was implanted in a 2 μm thick GaN epilayer at an energy of 50 keV. The sample was characterized by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy techniques after a post-implantation rapid thermal annealing (RTA) treatment. The HRTEM images show the crystallographic (1 1 0) and (0 0 2) planes of β-Be3N2. Two characteristic parallelograms drawn in Fast Fourier transform (FFT) image support the formation of β-Be3N2 nanocrystallites in RTA treated sample. Two Raman peaks at 168 and 199 cm−1 are observed in the Raman spectrum of the sample that are assigned to β-Be3N2 on the basis of group theory and HRTEM data. The Raman peak at 168 cm−1 is found close to the K point in the first Brillouin zone of β-Be3N2 while the peak at 199 cm−1 is assigned as a combination mode of the fundamental Raman modes of β-Be3N2.

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