Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

Komiak, J.J.; Lender, R.; Chu, Kanin; Chao, P.C.

doi:10.1109/csics.2011.6062482

Cited by 13 publications

(3 citation statements)

References 3 publications

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“…A wide-scan phased array presents some additional constraints, such as operating into a high-VSWR radiating element impedance. Quadrature-balanced amplifiers are frequently utilized to mitigate load pull effects [43]. …”

Section: Power Combining and Transmittersmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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Section: Power Combining and Transmittersmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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“…Starting with commercially-available GaN-on-SiC epitaxial wafers, devices were fabricated using the dual field plate GaN HEMT production process at BAE Systems [2] [3]. Mesa isolation was performed using chlorine-based inductivelycoupled plasma reactive ion etching (ICP-RIE).…”

Section: Device Fabricationmentioning

confidence: 99%

S2-T4: Low-temperature substrate bonding technology for high power GaN-on-diamond HEMTs

Chu

Chao

Diaz

et al. 2014

2014 Lester Eastman Conference on High Performance Devices (LEC)

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We report the first demonstration of GaN-ondiamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transferred onto high-quality polycrystalline diamond with thermal conductivity of 1,800 -2,000 W/mK. Resulting GaN-on-diamond HEMTs demonstrated DC current density of 1.0A/mm, transconductance of 330mS/mm, and RF output power density of 6.0W/mm at 10GHz (CW). Finiteelement thermal modeling indicates GaN-on-diamond technology based on low-temperature substrate bonding is capable of 3X increased power per area compared to conventional GaN-on-SiC devices.

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“…Non-uniform distributed PA MMICs have yielded 5 W output power with between 20 and 30% power added efficiency (PAE) over 2 to 15 GHz at P 3 dB [1]. Balanced MMICs yield 8.2 to 14.5 W and 18.1 to 46.1% PAE over 1 to 6 GHz [2]. A single ended matched MMIC cell with 6.8 to 8 dB gain, yields a Pout > 5 W and drain efficiency 43% to 59% from 7 to 14 GHz [3].…”

Section: Introductionmentioning

confidence: 99%

High Efficiency GaN 2.5 to 9 GHz Power Amplifiers Realized in Multilayer LCP Hybrid Technology

Powell

Shepphard

Cripps

2016

IEEE Microw. Wireless Compon. Lett.

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This letter presents wide bandwidth and high efficiency hybrid balanced and push-pull amplifier circuit topologies using Gallium Nitride (GaN) transistors and Liquid Crystal Polymer (LCP) multilayer circuit techniques. Push-pull circuit configurations allow differential and common mode impedances to be presented at even and odd harmonics independently, enabling the continuous mode (class BJ) design space to be exploited. Push-pull amplifiers display drain efficiencies > 40%, output power > 5 W over a bandwidth of 3.5 to 8.5 GHz at 2 dB compression levels, and under CW conditions. By comparison, although designed with identical performance goals, a conventional quadrature balanced amplifier performance is below that of the push-pull configuration.Index Terms-Broadband amplifiers, liquid crystal, power amplifier (PA).

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Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

Cited by 13 publications

References 3 publications

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

S2-T4: Low-temperature substrate bonding technology for high power GaN-on-diamond HEMTs

High Efficiency GaN 2.5 to 9 GHz Power Amplifiers Realized in Multilayer LCP Hybrid Technology

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