Wide-Temperature-Range (25–80 °C) 53-Gbaud PAM4 (106-Gb/s) Operation of 1.3-<i>μ</i>m Directly Modulated DFB Lasers for 10-km Transmission

Sasada, Noriko; Nakajima, Takayuki; Sekino, Yuji; Nakanishi, Akira; Mukaikubo, M.; Ebisu, Masahiro; Mitaki, Masatoshi; Hayakawa, Shinjiro; Naoe, Kazuhiko

doi:10.1109/jlt.2019.2894173

Cited by 32 publications

(13 citation statements)

References 10 publications

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“…To integrate III-V photonic devices with different bandgap active regions on a Si substrate, the growth of a ternary or quaternary compound semiconductor is also necessary. In particular, a strained MQW is widely used as an active region for state-of-the-art DMLs and electro-absorption modulators [63][64][65][66]. We demonstrated the growth of MQWs on InP-on-insulator followed by epitaxial regrowth of InP to fabricate a BH, by keeping the total thickness to less than 350 nm.…”

Section: Growth Of Multi-quantum-well Double-hetero Structurementioning

confidence: 99%

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

et al. 2021

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The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

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Section: Growth Of Multi-quantum-well Double-hetero Structurementioning

confidence: 99%

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

et al. 2021

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“…The distributed feedback (DFB) lasers has the potential to provide the required bandwidth for carrying >100-Gb/s signals [1][2][3].To achieve 100-Gb/s per channel transmission with 4-level pulse amplitude modulation (PAM-4), the required transmitter bandwidth is 31-GHz [4], which has been demonstrated by several groups for direct modulation of DFB lasers. The techniques to accomplish ultrahigh-speed modulation for DMLs can be classified into two categories: pure carrier-photon resonance (CPR) type and photon-assisted type.…”

Section: Introductionmentioning

confidence: 99%

Improvement on Direct Modulation Responses and Stability by Partially Corrugated Gratings Based DFB Lasers With Passive Feedback

2021

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DFB lasers with ultrashort cavities or integrated DFB lasers with passive waveguide reflectors are frequently proposed to realize directly modulated lasers (DMLs) for carrying ultrahigh data rate signals. The former suffers from poor heatsink and laser cleavage yield, while the single-mode stability of the latter scheme is seldom addressed. The mode selection and device performance of a DFB laser is well known to be very sensitive to the facet reflection and external optical feedback. The DFB lasers with partial corrugated gratings and passive feedback (PCG-PFL) are proposed here to overcome the challenging issues for the aforementioned two schemes. With PCG structure, the DFB lasers can maintain high single-mode yield (SMY) even with a high-reflection-coating on the rear facet and strong reflection from the integrated passive section. This provides the robustness in applying the integrated passive reflector to reshape the modulation response or to enhance the 3-dB bandwidth by using the photon-photon resonance (PPR) effect. By designing the PCG-PFL to have 150-m long laser section, 50-m long passive section, and 30% front-facet reflectivity, it can have about 86% of SMY, reduced resonant peak in the intensity modulation response, and reduced waveform overshoot and undershoot for transmitting 56-Gbaud/s PAM-4 signals. By using a longer passive reflector, enhanced bandwidth can be achieved by the PPR effect.

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“…In recent years, much work has been done to increase the performance of DMLs, in particular by increasing the resonant frequency of the laser. For example, transmissions at 25 GBaud and even 56 GBaud PAM4 have been successfully demonstrated [1].…”

Section: Introductionmentioning

confidence: 99%

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

Dai¹,

Debrégeas²,

Rold³

et al. 2021

IEEE J. Select. Topics Quantum Electron.

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This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorusbased multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O-and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.

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Wide-Temperature-Range (25–80 °C) 53-Gbaud PAM4 (106-Gb/s) Operation of 1.3-μm Directly Modulated DFB Lasers for 10-km Transmission

Cited by 32 publications

References 10 publications

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Improvement on Direct Modulation Responses and Stability by Partially Corrugated Gratings Based DFB Lasers With Passive Feedback

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

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