37th European Conference and Exposition on Optical Communications 2011
DOI: 10.1364/ecoc.2011.we.10.p1.34
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Wide Temperature Range 0 < T < 85 °C Narrow Linewidth Discrete Mode Laser Diodes for Coherent Communications Applications

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Cited by 7 publications
(7 citation statements)
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References 9 publications
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“…Using OIL, low cost lasers with relatively large linewidth can be turned into high performance narrow linewidth lasers. Fig.5 shows an experimental example we carried out using a 5 kHz fiber laser master to OIL a 1.2 MHz linewidth discrete mode semiconductor slave laser [48]. The laser linewidth was measured using a selfheterodyne setup with an 80 km standard single mode fiber (SMF-28) delay line [49].…”
Section: Features Of Optical Injection Locking a Linewidth Redumentioning
confidence: 99%
“…Using OIL, low cost lasers with relatively large linewidth can be turned into high performance narrow linewidth lasers. Fig.5 shows an experimental example we carried out using a 5 kHz fiber laser master to OIL a 1.2 MHz linewidth discrete mode semiconductor slave laser [48]. The laser linewidth was measured using a selfheterodyne setup with an 80 km standard single mode fiber (SMF-28) delay line [49].…”
Section: Features Of Optical Injection Locking a Linewidth Redumentioning
confidence: 99%
“…The laser wavelength was 780 nm, and the spectral linewidth was only 2 MHz. On this basis, Ireland Brana Optoelectronics Company and Dublin City University [39] jointly developed separated mode semiconductor lasers that with a wide operating temperature range. The laser line width is less than 250 kHz, the SMRR is ∼40 dB, and the output power is about 4 mW.…”
Section: Coupled Cavity Semiconductor Lasermentioning
confidence: 99%
“…2011 年, 爱尔兰布拉纳光电公司联合瑞士纽夏特大学 [38] 提出一种分离模式半导体激光器, 通过 在脊形波导上刻蚀多个深槽引入折射率微扰, 进而增强一个 F-P 模式, 损耗其他模式, 获得单纵模激 光输出, 实现激光波长 780 nm, 光谱线宽仅为 2 MHz. 在此基础上, 爱尔兰布拉纳光电公司和都柏 林城市大学 (Dublin City University) [39] 联合研制出一种宽工作温区的分离模式半导体激光器, 实现 在 0 • C < T < 85 • C 温度范围内保持单纵模工作, 激光线宽 < 250 kHz, SMSR 达 40 dB, 输出功率约 4 mW. 2018 年, 该公司 [40] 又报道了一种单片集成单模红光半导体激光器, 采用分离模式结构实现激 光波长 689 nm, 激光功率 10 mW, SMSR…”
Section: 表面光栅分布反馈半导体激光器unclassified