2007
DOI: 10.1049/el:20071384
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Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load

Abstract: A regenerative frequency divider with a differential transimpedance amplifier (TIA) active load using 0.35 mm SiGe HBT technology is demonstrated. The differential TIA is beneficial for higher frequency and lower sensitivity operation, and the inductive peaking enhances the bandwidth of the output buffer. From the experimental results, the operating frequency ranges from 5 to 27 GHz (f max =f min ¼ 5.2) for a supply voltage of 5 V and core power consumption of 49.5 mW. The chip size is 0.86 Â 0.822 mm.

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Cited by 3 publications
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“…A flip‐flop configured as a static divided‐by‐two is limited in range by the propagation delay time of the master and slave stages, which are wideband circuits capable of operating from DC to the maximum toggle frequency, f max‐toggle . The toggle rate for static dividers may be increased through the application of inductive peaking, active loads [2] and layout optimisation [3]. Frequencies beyond f max‐toggle are reached by employing regenerative division with a dynamic circuit.…”
Section: Introductionmentioning
confidence: 99%
“…A flip‐flop configured as a static divided‐by‐two is limited in range by the propagation delay time of the master and slave stages, which are wideband circuits capable of operating from DC to the maximum toggle frequency, f max‐toggle . The toggle rate for static dividers may be increased through the application of inductive peaking, active loads [2] and layout optimisation [3]. Frequencies beyond f max‐toggle are reached by employing regenerative division with a dynamic circuit.…”
Section: Introductionmentioning
confidence: 99%