Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (000−1): A study of ridge structures formation dynamics associated with temperature

Ushio, Shoji; Yoshii, Arata; Tamai, Naoto; Ohtani, Noboru; Kaneko, Tadaaki

doi:10.1016/j.jcrysgro.2010.11.091

Cited by 9 publications

(8 citation statements)

References 16 publications

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“…In order to exfoliate a single sheet, van der Waals attraction between exactly the first and second layers must be overcome without disturbing any subsequent sheets (Allen, Tung et al 2010). Many studies emerged over the last years with alternatives to mechanical exfoliation including chemical vapour deposition (Zhao, Rim et al 2011), epitaxial growth (Ushio S, Arata Yoshii et al 2011), carbon nanotube cutting (Janowska, Ersen et al 2009), chemical exfoliation (Wang, Robinson et al 2009) and direct sonication (Lotya, Hernandez et al 2009). Each of these methods presents both advantages and disadvantages, dealing with cost and scalability.…”

Section: Introductionmentioning

confidence: 99%

Functionalized Graphene Nanocomposites

Marques¹,

Gonçalves²,

Cruz³

et al. 2011

Advances in Nanocomposite Technology

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Section: Introductionmentioning

confidence: 99%

Functionalized Graphene Nanocomposites

Marques¹,

Gonçalves²,

Cruz³

et al. 2011

Advances in Nanocomposite Technology

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“…We used 4 • off-axis 4H-SiC wafers as a substrate, and we grew ordered and homogeneous graphene ribbons across the whole surface of the wafer, with a width up to 40 µm and a length up to 1000 µm. It is worth noting that the ordered ribbons grown along the templates did not have any micro defects such as grain boundaries, ridges, or mono-and few-layer graphene mixtures, compared to graphene grown on on-axis 4H-SiC wafer whose surface is nearly step-free [45,46]. Our results shed light on the growth of high-quality graphene film on silicon carbide crystal.…”

Section: Introductionmentioning

confidence: 65%

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

et al. 2018

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Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.

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“…The main preparation methods for high-quality graphene are the micro-mechanical stripping method [4], the epitaxial growth method [5], the graphite oxide reduction method [6], and the chemical vapor deposition method [7]. The graphene prepared using the micromechanical exfoliation and epitaxial growth method presents as single-layer graphene with high purity [8]. However, the graphene prepared with such technology is only used at the laboratory level due to its extremely low output and high requirements for hardware facilities, which greatly affects the commercialization process of graphene.…”

Section: Introductionmentioning

confidence: 99%

Superhydrophobic and Electrochemical Performance of CF2-Modified g-C3N4/Graphene Composite Film Deposited by PECVD

Li¹,

Lu²,

Zhang³

2022

Nanomaterials

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The physicochemical properties of functional graphene are regulated by compositing with other nano-carbon materials or modifying functional groups on the surface through plasma processes. The functional graphene films with g-C3N4 and F-doped groups were produced by controlling the deposition steps and plasma gases via radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The first principles calculation and electrochemistry characteristic of the functional graphene films were performed on Materials Studio software and an electrochemical workstation, respectively. It is found that the nanostructures of functional graphene films with g-C3N4 and F-doped groups were significantly transformed. The introduction of fluorine atoms led to severe deformation of the g-C3N4 nanostructure, which created gaps in the electrostatic potential of the graphene surface and provided channels for electron transport. The surface of the roving fabric substrate covered by pure graphene is hydrophilic with a static contact angle of 79.4°, but the surface is transformed to a hydrophobic state for the g-C3N4/graphene film with an increased static contact angle of 131.3° which is further improved to 156.2° for CF2-modified g-C3N4/graphene film exhibiting the stable superhydrophobic property. The resistance of the electron movement of CF2-modified g-C3N4/graphene film was reduced by 2% and 76.7%, respectively, compared with graphene and g-C3N4/graphene.

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Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (000−1): A study of ridge structures formation dynamics associated with temperature

Cited by 9 publications

References 16 publications

Functionalized Graphene Nanocomposites

Functionalized Graphene Nanocomposites

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Superhydrophobic and Electrochemical Performance of CF2-Modified g-C3N4/Graphene Composite Film Deposited by PECVD

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