Wide Range Photodetector Based on Catalyst Free Grown Indium Selenide Microwires

Abstract

We first report the catalyst free growth of indium selenide microwires through a facile approach in a horizontal tube furnace using indium and selenium elemental powders as precursors. The synthesized microwires are γ-phase, high quality, single crystalline and grown along the [112̅0] direction. The wires have a uniform diameter of ∼1 μm and lengths of several micrometers. Photodetectors fabricated from synthesized microwires show reliable and stable photoresponse exhibiting a photoresponsivity of 0.54 A/W, external quantum efficiency of 1.23 at 633 nm with 4 V bias. The photodetector has a reasonable response time of 0.11 s and specific detectivity of 3.94 × 10(10) Jones at 633 nm with a light detection range from 350 to 1050 nm, covering the UV-vis-NIR region. The photoresponse shown by single wire is attributed to direct band gap (Eg = 1.3 eV) and superior single crystalline quality. The photoresponsive studies of single microwires clearly suggest the use of this new and facile growth technique without using catalysts for fabrication of indium selenide microwires in next-generation sensors and detectors for commercial and military applications.

Atypical BiOCl/Bi2S3 hetero-structures exhibiting remarkable photo-catalyst response

“…However, the atypical architectures fabricated from hard template and through two-step synthetic strategies mostly suffering from their high cost and tedious synthetic procedures [19][20][21][22][23][24][25]. So it is highly desirable to develop one-pot synthesis of novel inorganic materials without templates and to explore their multifunction.…”

Giant UV-sensitivity of ion beam irradiated nanocrystalline CdS thin films

“…Till date, a number of SNs have been used in UV-detectors and the mechanism involved in the photodetection has also been uncovered to some extent. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Cadmium sulde (CdS) with its direct band gap (for bulk CdS $ 2.42 eV) is one of the most studied metal chalcogenide semiconductors because of its relatively low work function, large refractive index, outstanding emission in the visible range, and excellent thermal and chemical stability. The excellent electronic and optical properties of CdS have been exploited for the development of solar cells, 18 LEDs, 19 photodetectors, 8,9 waveguides, 20 electrochemiluminescence sensors, 21 bio-imaging, 22 and lasers.…”

“…Thiyagarajan et al investigated articially introduced defects on a graphene surface for the fabrication of a gate tunable UV-sensor and achieved a response time in the order of seconds 11. A wide wavelength photodetector exhibiting fairly sensitive behavior for UV-light was demonstrated by Ali et al using indium selenide microwires grown using a vapor-solid technique 13. Shao et al fabricated an organic-inorganic hybrid structure to realize an UV-sensor with a sufficiently reduced response time 14.…”

Self-Assembly High-Performance UV–vis–NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection

“…For instance, monolayer α-In 2 Se 3 flakes have been fabricated by a physical vapor deposition method, which exhibited excellent photoresponse in terms of high responsivity . However, pristine In 2 Se 3 -based photodetectors always suffer from low detectivity (∼10 11 jones) and poor current on/off ratio (less than 10) because of the absence of type-II staggered p–n junctions, which allows efficient separation of photoexcited electron–hole pairs. ,, On the other hand, owing to their small thickness, monolayer or few-layer In 2 Se 3 can only absorb a small portion of incident light, restricting photocurrent improvement . Furthermore, differing from graphene, which can be attained in large scale through catalytic growth on metal substrates, scalable production of the intact layered In 2 Se 3 film has not yet been widely demonstrated, making it difficult for large-scale device applications.…”