Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Hung, Chien‐Ching; Lee, Yuan-Jen; Kao, Ming-Jer; Wang, Yung-Hung; Huang, Rei-Fu; Chen, Wei‐Chuan; Chen, Young-Shying; Shen, Kuei-Hung; Tsai, Ming-Jinn; Lin, Wen-Chin; Tang, D.D.; Chao, S.

doi:10.1063/1.2181628

Cited by 13 publications

(1 citation statement)

References 5 publications

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“…Conventionally, memory designers are forced to perform the characterization test for the failed chips to identify a suitable write current for each chip; however, the characterization test is time consuming and inefficient for mass production. In the past few years, new architectures and material for the MTJ device have been proposed to enlarge the operating region [11], [12]. These approaches help reduce the influence of the operating region shift; nevertheless, they cannot avoid the variation-induced parametric failures due to process imperfection.…”

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confidence: 99%

Write Current Self-Configuration Scheme for MRAM Yield Improvement

Chen

Wang

2013

IEEE Trans. VLSI Syst.

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Magnetic random access memory (MRAM) is an emerging nonvolatile memory, which is widely studied for its high speed, high density, small cell size, and almost unlimited endurance. However, for deep-submicrometer process technologies, significant variation in the MRAM cells' operating condition results in write failures in cells and reduces the production yield. Memory designers have to characterize failed MRAM chips to find a suitable current level for reconfiguring their write current, which is time consuming. In this paper, we propose an efficient operating-current search method and the corresponding built-in circuit for toggle MRAM, which can rapidly find the minimal operating current. With the built-in search circuit, an MRAM chip can dynamically configure its write current through few tester channels. The resulting chip works correctly and consumes lower power. Production yield, thus, can be increased while the test cost is greatly reduced. We also present a generator of the circuit, which determines the circuit parameters according to the memory specifications and user requirements, and automatically generates the corresponding modules.Index Terms-Built-in self-test (BIST), characterization, memory testing, magnetic random access memory (MRAM), yield enhancement.

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confidence: 99%