Wide operating window spin-torque majority gate towards large-scale integration of logic circuits

Vaysset, Adrien; Zografos, Odysseas; Manfrini, Mauricio; Mocuta, D.; Radu, Iuliana

doi:10.1063/1.5007758

Cited by 8 publications

(5 citation statements)

References 30 publications

(35 reference statements)

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“…Such a multifunctional logic operation in a single spin device helps to reduce circuit complexity. [138,139] The sMAJ device displays robust durability over several cycles [129] (Figure 7d) and exhibits promising future potential applications.…”

Section: Lateral Spin Valve and Spin Logic Devices In Graphenementioning

confidence: 99%

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Graphene Spin Valves for Spin Logic Devices

2023

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An alternative to charge‐based electronics identifies the spin degree of freedom for information communication and processing. The long spin‐diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field‐effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge‐based FETs is compared to highlight their prospects for low‐power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.

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Section: Lateral Spin Valve and Spin Logic Devices In Graphenementioning

confidence: 99%

“…[145] For efficient cascading, similar input and output variable in the spin device is desired to avoid power loss due to repeated spin-to-charge conversion. [25,139]…”

Section: Cascadingmentioning

confidence: 99%

Graphene Spin Valves for Spin Logic Devices

2023

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“…The fourth type of device is the spin-torque majority gate (STMG), but despite its great potential, it is rather unpopular. Its original idea was proposed by Nikonov (Intel) [186] and an upgraded version has recently been reported [187]. The majority gate returns a logical 'true' if and only if more than 50% of its inputs are 'true', so that the majority gate acts as an AND/OR gate depending on the third input.…”

Section: Current and Future Challengesmentioning

confidence: 99%

“…If there are three inputs, as shown in figure 25(a), the magnetic states of the junction area are determined by the majority of inputs, similarly to QCA operations. The main advantages of STMG lie in its simple structure, reconfigurability and the possibility of implementing the fan-out and cascading functions [187] (see section 11). This has great potential in relation to neuromorphic devices, as some STMG devices exhibit memristor behaviour, which is the basic function of a synapse, in which the signal depends on the DW position.…”

Section: Current and Future Challengesmentioning

confidence: 99%

The 2020 magnetism roadmap

Vedmedenko¹,

Kawakami

Sheka

et al. 2020

J. Phys. D: Appl. Phys.

202

118

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Andreas Berger CICnanoGUNE BRTA Following the success and relevance of the 2014 and 2017 Magnetism Roadmap articles, this 2020 Magnetism Roadmap edition takes yet another timely look at newly relevant and highly active areas in magnetism research. The overall layout of this article is unchanged, given that it has proved the most appropriate way to convey the most relevant aspects of today’s magnetism research in a wide variety of sub-fields to a broad readership. A different group of experts has again been selected for this article, representing both the breadth of new research areas, and the desire to incorporate different voices and viewpoints. The latter is especially relevant for thistype of article, in which one’s field of expertise has to be accommodated on two printed pages only, so that personal selection preferences are naturally rather more visible than in other types of articles. Most importantly, the very relevant advances in the field of magnetism research in recent years make the publication of yet another Magnetism Roadmap a very sensible and timely endeavour, allowing its authors and readers to take another broad-based, but concise look at the most significant developments in magnetism, their precise status, their challenges, and their anticipated future developments. While many of the contributions in this 2020 Magnetism Roadmap edition have significant associations with different aspects of magnetism, the general layout can nonetheless be classified in terms of three main themes: (i) phenomena, (ii) materials and characterization, and (iii) applications and devices. While these categories are unsurprisingly rather similar to the 2017 Roadmap, the order is different, in that the 2020 Roadmap considers phenomena first, even if their occurrences are naturally very difficult to separate from the materials exhibiting such phenomena. Nonetheless, the specifically selected topics seemed to be best displayed in the order presented here, in particular, because many of the phenomena or geometries discussed in (i) can be found or designed into a large variety of materials, so that the progression of the article embarks from more general concepts to more specific classes of materials in the selected order. Given that applications and devices are based on both phenomena and materials, it seemed most appropriate to close the article with the application and devices section (iii) once again. The 2020 Magnetism Roadmap article contains 14 sections, all of which were written by individual authors and experts, specifically addressing a subject in terms of its status, advances, challenges and perspectives in just two pages. Evidently, this two-page format limits the depth to which each subject can be described. Nonetheless, the most relevant and key aspects of each field are touched upon, which enables the Roadmap as whole to give its readership an initial overview of and outlook into a wide variety of topics and fields in a fairly condensed format. Correspondingly, the Roadmap pursues the goal of giving each reader a brief reference frame of relevant and current topics in modern applied magnetism research, even if not all sub-fields can be represented here. The first block of this 2020 Magnetism Roadmap, which is focussed on (i) phenomena, contains five contributions, which address the areas of interfacial Dzyaloshinskii–Moriya interactions, and two-dimensional and curvilinear magnetism, as well as spin-orbit torque phenomena and all optical magnetization reversal. All of these contributions describe cutting edge aspects of rather fundamental physical processes and properties, associated with new and improved magnetic materials’ properties, together with potential developments in terms of future devices and technology. As such, they form part of a widening magnetism ‘phenomena reservoir’ for utilization in applied magnetism and related device technology. The final block (iii) of this article focuses on such applications and device-related fields in four contributions relating to currently active areas of research, which are of course utilizing magnetic phenomena to enable specific functions. These contributions highlight the role of magnetism or spintronics in the field of neuromorphic and reservoir computing, terahertz technology, and domain wall-based logic. One aspect common to all of these application-related contributions is that they are not yet being utilized in commercially available technology; it is currently still an open question, whether or not such technological applications will be magnetism-based at all in the future, or if other types of materials and phenomena will yet outperform magnetism. This last point is actually a very good indication of the vibrancy of applied magnetism research today, given that it demonstrates that magnetism research is able to venture into novel application fields, based upon its portfolio of phenomena, effects and materials. This materials portfolio in particular defines the central block (ii) of this article, with its five contributions interconnecting phenomena with devices, for which materials and the characterization of their properties is the decisive discriminator between purely academically interesting aspects and the true viability of real-life devices, because only available materials and their associated fabrication and characterization methods permit reliable technological implementation. These five contributions specifically address magnetic films and multiferroic heterostructures for the purpose of spin electronic utilization, multi-scale materials modelling, and magnetic materials design based upon machine-learning, as well as materials characterization via polarized neutron measurements. As such, these contributions illustrate the balanced relevance of research into experimental and modelling magnetic materials, as well the importance of sophisticated characterization methods that allow for an ever-more refined understanding of materials. As a combined and integrated article, this 2020 Magnetism Roadmap is intended to be a reference point for current, novel and emerging research directions in modern magnetism, just as its 2014 and 2017 predecessors have been in previous years.

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“…In 2006, Imre et al [39] demonstrated the majority gate using nanomagnets (NMLs), where information is transmitted through adjacent nanomagnets via dipolar coupling. Several reports proposed the majority logic gate based on domain wall (DW) transported by spin current via spin-transfer torque (STT) [40][41][42]. However, the DW-based devices require relatively high current densities, which results in instability in the device due to joule heating [43].…”

Section: Introductionmentioning

confidence: 99%

Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

et al. 2023

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Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3-bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing a gate that works on voltage controlled magnetic anisotropy. Here, the inhomogeneous magnetic anisotropy behaves as a tunable potential barrier/well that modulates the skyrmion trajectory in the structure for the successful implementation of the majority logic gate. In addition, several other effects such as skyrmion-skyrmion topological repulsion, skyrmion-edge repulsion, spin-orbit torque and skyrmion Hall effect have been shown to govern the logic functionalities. We have systematically presented the robust logic operations by varying the current density, magnetic anisotropy, voltage-controlled gate dimension and geometrical parameters of the logic device. The skyrmion Hall angle is monitored to understand the trajectory and stability of the skyrmion as a function of time in the logic device. The results demonstrate a novel method to achieve majority logic by using voltage controlled magnetic anisotropy which further opens up a new route for skyrmion-based low-power and high-speed computing devices.

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Wide operating window spin-torque majority gate towards large-scale integration of logic circuits

Cited by 8 publications

References 30 publications

Graphene Spin Valves for Spin Logic Devices

Graphene Spin Valves for Spin Logic Devices

The 2020 magnetism roadmap

Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

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