2005
DOI: 10.1109/tcsi.2005.852011
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Wide-linear-range subthreshold OTA for low-power, low-Voltage, and low-frequency applications

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Cited by 50 publications
(28 citation statements)
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“…Some involve directly adding or removing charge on the gate through tunneling, hot-electron injection, or ultraviolet exposure. Alternatively, MOS switches (switched-capacitor circuits) and ultrahigh resistance connections (the quasi-floating-gate technique) can be used to establish the gate voltage [10]. All these approaches add complexity and expense to the system.…”
Section: Effect Of the Component Mismatches On Linearitymentioning
confidence: 99%
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“…Some involve directly adding or removing charge on the gate through tunneling, hot-electron injection, or ultraviolet exposure. Alternatively, MOS switches (switched-capacitor circuits) and ultrahigh resistance connections (the quasi-floating-gate technique) can be used to establish the gate voltage [10]. All these approaches add complexity and expense to the system.…”
Section: Effect Of the Component Mismatches On Linearitymentioning
confidence: 99%
“…All these approaches add complexity and expense to the system. However, it was pointed out in [10,11] that when poly gate layers are connected to isolated metal layers, but are otherwise floating (a connection referred to here as ''almost-floating''), nearzero initial gate charge is present. This is very useful, as it allows many circuits to be implemented without accounting for initial charge.…”
Section: Effect Of the Component Mismatches On Linearitymentioning
confidence: 99%
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“…Many linearity improvement techniques have been reported in recent years, such as attenuation [2], source degeneration [3][4][5], nonlinear terms cancelation [6][7][8][9][10][11], and triode-based transconductor [12][13][14]. The linearity can be improved by adding resistance in source of the input transistors in the source degeneration technique.…”
Section: Introductionmentioning
confidence: 99%
“…The reason is that weak inversion current in an MOS transistor depends exponentially on voltage. For approximately 1% of transconductance variation, a traditional symmetrical OTA built with a gate-driven differential pair in weak inversion has a linear input range of a few 10 mV [2]. Several modified symmetrical OTAs have been developed to achieve transconductances in the order of a few nA/V with a linear input range up to 1 V or more, where the natural attenuating properties of the floating-gate and bulk-driven transistors have been advantageously utilized for realizing small transconductance values [1][2][3].…”
Section: Introductionmentioning
confidence: 99%