Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride

Comtet, Jean; Glushkov, Evgenii; Navikas, Vytautas; Feng, Jiandong; Babenko, Vitaliy; Hofmann, Stephan; Watanabe, Kenji; Taniguchi, Takashi; Radenović, Aleksandra

doi:10.1021/acs.nanolett.9b00178

Cited by 77 publications

(112 citation statements)

References 51 publications

(113 reference statements)

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“…Conversely, while the potential of varying charge states of the same structural defect may be more suitable to explain the results based on demonstrations of spectral jumping of up to 100 nm, this has been previously attributed to photochemical reactions taking place at the flake surface and/or trapped carrier induced stark shifts, neither of which appear suitable to explain the consistency of the localization observed in our study across multiple growths and samples. Furthermore, these conclusions are supported by recent photophysical characterization of SPEs within these specific spectral regions …”

Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Insupporting

confidence: 67%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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Robust and photostable single photon emitters (SPEs) underpin a number of promising quantum information science and technologies. [1][2][3][4] Solid-state quantum light sources are highly sought after for their ease of integration into onchip architectures, and rapid progress has been made recently with a variety of solidstate sources such as quantum dots, [5,6] color centers in diamond, [7,8] silicon carbide, [9,10] rare-earth materials, [11] carbon nanotubes, [12] and layered van der Waals materials. [3] One of the most promising candidates are quantum emitters in hexagonal boron nitride (hBN), which have recently emerged as a robust solid-state platform capable of hosting bright, [13][14][15][16][17] linearly polarized, [13,18] and optically stable SPEs operating at room temperature with high photon purity. [19,20] While the zerophonon lines (ZPLs) of hBN quantum emitters have been known to display a wide spread of energies (≈1.6-2.4 eV), implying the existence of multiple defect species, [15,18,[21][22][23] recent progress utilizing chemical vapor deposition (CVD) has shown that this spread can be reduced to ≈100 meV. [24,25] This reduced ZPL energy distribution is useful both for applications and for basic studies of the defects responsible for the emissions. However, to fully understand and exploit the diversity of emissions reported in hBN further advances in controlling the observed emission spectra and emitter density are required.In order to target the incorporation of particular structural defects during CVD growth, a method to modify the dominant defect formation processes is required. In situ monitoring of hBN growth on Cu has clarified that hBN growth is subject to complex interaction between the precursor species, and the catalyst surface/bulk. [26] As a result, controlling the interactions between the precursor species and the catalyst is critical to achieve highly crystalline hBN growth, but also offers a promising avenue to controlled defect engineering during CVD growth of hBN. In other material systems such as InAs/ GaAs quantum dots modifying catalyst properties such as lattice mismatch during epitaxial growth has been definitively linked to defect creation. [27] Similarly graphene is known to be dependent of the interactions with the catalyst bulk/surface, where growth depends strongly on the relative phase of the catalyst and the supply of carbon in and out of the catalyst, controlling both defect formation and density. [28,29] Despite added complications for CVD growth of hBN, especially due to Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone toward their integration into on-chip photonic architectures. Here, an effective approach is reported to fabricate hBN SPEs with desired emission properties in distinct spectral regions via the manipulation of boron diffusion through ...

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Section: Comparison Of Emission Energy and Density Of Cvd Hbn Spes Insupporting

confidence: 67%

Selective Defect Formation in Hexagonal Boron Nitride

Abidi

Mendelson

Tran

et al. 2019

Advanced Optical Materials

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“…Raman shift (cm Applications of CVD multilayer h-BN. The multilayer h-BN transferred onto a SiO 2 (300 nm)/Si substrate was investigated by room-temperature Raman and photoluminescence (PL) spectroscopies for determining the optically active defect distribution [35][36][37][38][39][40][41] . As shown in supplementary Fig.…”

Section: Mechanism Of Vlsg Of Multilayer H-bn On Fe 82 B 18 Alloymentioning

confidence: 99%

“…14d-f). The fact that no optical emissions at energies between 1.7 and 2.2 eV could be found in large uniform areas provides the possibility to artificially fabricate optically active defects for optoelectronics in the future 40 .…”

Section: Mechanism Of Vlsg Of Multilayer H-bn On Fe 82 B 18 Alloymentioning

confidence: 99%

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Shi

Wang

et al. 2020

Nat Commun

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Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor-liquid-solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe 82 B 18 alloy and N 2 as reactants. Liquid Fe 82 B 18 not only supplies boron but also continuously dissociates nitrogen atoms from the N 2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.

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“…By extending our model to include polarized emitter families and comparing to polarization resolved data, we could leverage the statistical power of much larger emitter ensembles to study the distribution of dipole orientations. A similar extension of our model could account for the emitters' spectra; including spectrally resolved data could reveal phenomena such as zero phonon line clustering, which has been observed in multiple recent studies [40][41][42]. By adapting the underlying spatial probability distribution functions, the model can be further extended to account for emitters clustering near edges or other extended defects.…”

Section: Discussionmentioning

confidence: 75%

Efficient Optical Quantification of Heterogeneous Emitter Ensembles

et al. 2019

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Defect-based quantum emitters in solid state materials offer a promising platform for quantum communication and sensing. Confocal fluorescence microscopy techniques have revealed quantum emitters in a multitude of host materials. In some materials, however, optical properties vary widely between emitters, even within the same sample. In these cases, traditional ensemble fluorescence measurements are confounded by heterogeneity, whereas individual defect-by-defect studies are impractical. Here, we develop a method to quantitatively and systematically analyze the properties of heterogeneous emitter ensembles using large-area photoluminescence maps. We apply this method to study the effects of sample treatments on emitters in hexagonal boron nitride, and we find that low-energy (3 keV) electron irradiation creates emitters, whereas high-temperature (850 • C) annealing in an inert gas environment brightens emitters. arXiv:1909.12726v1 [cond-mat.mtrl-sci]

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Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride

Cited by 77 publications

References 51 publications

Selective Defect Formation in Hexagonal Boron Nitride

Selective Defect Formation in Hexagonal Boron Nitride

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Efficient Optical Quantification of Heterogeneous Emitter Ensembles

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