Wide‐Field Optical Microscopy of Microwave Fields Using Nitrogen‐Vacancy Centers in Diamonds

Shao, Linbo; Liu, Ruishan; Zhang, Mian; Shneidman, Anna V.; Audier, Xavier; Markham, Matthew; Dhillon, Harpreet; Twitchen, Daniel J.; Xiao, Yun‐Feng; Lončar, Marko

doi:10.1002/adom.201600039

Cited by 40 publications

(29 citation statements)

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“…We demonstrate a ∼0.5 mm 2 FOV with few-micron spatial resolution, a MW amplitude sensitivity of 130 nT Hz −1/2 , and a dynamic range of 48 dB. We have advanced the temporal resolution to the sub-ms regime, an order of magnitude beyond the previous state of the art [22], enabling dynamic probing of circuit operation, and real-time exploration of large-scale devices by scanning them under the microscope (Supplementary Movies 1, 2 [30]). In addition, the accessible design of our microscope enables high-throughput measurements with rapid exchange of MW devices, demonstrating its applicability to industry-relevant environments.…”

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confidence: 87%

Microwave Device Characterization Using a Widefield Diamond Microscope

et al. 2018

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Devices relying on microwave circuitry form a cornerstone of many classical and emerging quantum technologies. A capability to provide in-situ, noninvasive and direct imaging of the microwave fields above such devices would be a powerful tool for their function and failure analysis. In this work, we build on recent achievements in magnetometry using ensembles of nitrogen vacancy centers in diamond, to present a widefield microwave microscope with few-micron resolution over a millimeterscale field of view, 130 nT Hz −1/2 microwave amplitude sensitivity, a dynamic range of 48 dB, and sub-ms temporal resolution. We use our microscope to image the microwave field a few microns above a range of microwave circuitry components, and to characterize a novel atom chip design. Our results open the way to high-throughput characterization and debugging of complex, multicomponent microwave devices, including real-time exploration of device operation.Microwave (MW) devices play a critical role in telecommunications, defence, and quantum technologies. Device characterization via high resolution MW field imaging is a long-standing goal [1][2][3], which promises to overcome the limitations of conventional characterization techniques. For example, it is difficult to identify internal features of complex devices using S-parameter measurements of reflection and transmission through external device ports [4,5]. A high-throughput MW imaging method would allow for fast prototype iteration, and for more adventurous development of novel device architectures. Furthermore, MW imaging is of interest for spin-wave imaging in magnonic systems [6,7], is under investigation for medical imaging [8,9], and can be used to characterize materials [10] and biological samples [11]. In recent years, alkali vapor cells with atoms in the ground [12][13][14][15][16] or highly excited Rydberg [17][18][19] states, and nitrogen-vacancy (NV) centers in diamond [20-23] have shown promise for intrinsically calibrated MW imaging in simple, vacuum-and cryogen-free environments. Ensembles of NVs in a widefield diamond microscope [24][25][26][27][28] provide an excellent balance between the sensitivity and wide field of view (FOV) offered by vapor cells and the nanoscale spatial resolution of single NV centers [29], and so far have been primarily employed for imaging static and low-frequency magnetic fields. In this work, we demonstrate high-throughput widefield diamond microscopy for MW device characterization, enabled by a step-change we have achieved in microscope performance.Our microscope integrates advances in camera speed, experiment control, novel diamond material, laser illu-

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confidence: 87%

Microwave Device Characterization Using a Widefield Diamond Microscope

et al. 2018

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“…In particular, NV centers in diamond have been extensively studied and deployed in diverse applications facilitated by long NV spin coherence times [11,12] at ambient temperature, as well as optical preparation and readout of NV spin states [10]. Many applications utilize dense NV spin ensembles for high-sensitivity DC magnetic field sensing [13,14] and wide-field DC magnetic imaging [15][16][17][18][19], including measurements of single-neuron action potentials [13], paleomagnetism [19,20], and current flow in graphene [18].…”

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confidence: 99%

Ultralong Dephasing Times in Solid-State Spin Ensembles via Quantum Control

et al. 2018

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Quantum spin dephasing is caused by inhomogeneous coupling to the environment, with resulting limits to the measurement time and precision of spin-based sensors. The effects of spin dephasing can be especially pernicious for dense ensembles of electronic spins in the solid-state, such as nitrogenvacancy (NV) color centers in diamond. We report the use of two complementary techniques, spin bath driving, and double quantum coherence magnetometry, to enhance the inhomogeneous spin dephasing time (T * 2 ) for NV ensembles by more than an order of magnitude. In combination, these quantum control techniques (i) eliminate the effects of the dominant NV spin ensemble dephasing mechanisms, including crystal strain gradients and dipolar interactions with paramagnetic bath spins, and (ii) increase the effective NV gyromagnetic ratio by a factor of two. Applied independently, spin bath driving and double quantum coherence magnetometry elucidate the sources of spin ensemble dephasing over a wide range of NV and bath spin concentrations. These results demonstrate the longest reported T * 2 in a solid-state electronic spin ensemble at room temperature, and outline a path towards NV-diamond DC magnetometers with broadband femtotesla sensitivity.

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“…There are also applications that utilize ensembles of NV − centres. These includes detection of magnetic fields with the possibility over wide areas [5][6][7][8] and often for materials with biological [9,10] or geological interest [11,12]. In the case of these latter ensemble applications it is desirable that the NV − centres maintain the properties of the single centres.…”

Section: Introductionmentioning

confidence: 99%

NV⁻–N⁺ pair centre in 1b diamond

Manson¹,

Hedges²,

Michael³

et al. 2018

New J. Phys.

108

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With the creation of nitrogen (NV) in 1b diamond it is common to find that the absorption and emission is predominantly of negatively charged NV centres. This occurs because electrons tunnel from the substitutional nitrogen atoms to NV to form NV − -N + pairs. There can be a small percentage of neutral charge NV 0 centres and a linear increase of this percentage can be obtained with optical intensity. Subsequent to excitation it is found that the line width of the NV − zero-phonon has been altered. The alteration arises from a change of the distribution of N + ions and a modification of the average electric field at the NV − sites. The consequence is a change to the Stark shifts and splittings giving the change of the zero-phonon line (ZPL) width. Exciting the NV − centres enhances the density of close N + ions and there is a broadening of the ZPL. Alternatively exciting and ionizing N 0 in the lattice results in more distant distribution of N + ions and a narrowing of the ZPL. The competition between NV − and N 0 excitation results in a significant dependence on excitation wavelength and there is also a dependence on the concentration of the NV − and N 0 in the samples. The present investigation involves extensive use of low temperature optical spectroscopy to monitor changes to the absorption and emission spectra particularly the widths of the ZPL. The studies lead to a good understanding of the properties of the NV − -N + pairs in diamond. There is a critical dependence on pair separation. When the NV − -N + pair separation is large the properties are as for single sites and a high degree of optically induced spin polarization is attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. With separations of <12 A 0 there is even no emission. The deterioration occurs as a consequence of electron tunneling in the excited state from NVto N + and an optical cycle that involves NV 0 . The number of pairs with the smaller separations and poorer properties will increase with the number of nitrogen impurities and it follows that the degree of spin polarization that can be achieved for an ensemble of NV − in 1b diamond will be determined and limited by the concentration of single substitutional nitrogen. The information will be invaluable for obtaining optimal conditions when ensembles of NV − are required. As well as extensive measurements of the NV − optical ZPL observations of Stark effects associated with the infrared line at 1042 nm and the optically detected magnetic resonance at 2.87 GHz are also reported.

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Wide‐Field Optical Microscopy of Microwave Fields Using Nitrogen‐Vacancy Centers in Diamonds

Cited by 40 publications

References 50 publications

Microwave Device Characterization Using a Widefield Diamond Microscope

Microwave Device Characterization Using a Widefield Diamond Microscope

Ultralong Dephasing Times in Solid-State Spin Ensembles via Quantum Control

NV⁻–N⁺ pair centre in 1b diamond

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Wide‐Field Optical Microscopy of Microwave Fields Using Nitrogen‐Vacancy Centers in Diamonds

Cited by 40 publications

References 50 publications

Microwave Device Characterization Using a Widefield Diamond Microscope

Microwave Device Characterization Using a Widefield Diamond Microscope

Ultralong Dephasing Times in Solid-State Spin Ensembles via Quantum Control

NV−–N+ pair centre in 1b diamond

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Resources

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NV⁻–N⁺ pair centre in 1b diamond