Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors

Fazi, C.; Neudeck, Philip G.

doi:10.4028/www.scientific.net/msf.264-268.913

Cited by 8 publications

(8 citation statements)

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“…This was first demonstrated by Fazi and Neudeck in 1998 [1] in a direct comparison in which a Si diode was replaced by a SiC Schottky diode in a mixer. This work has been continued through publications of both SiC Schottky mixers which achieved an of 31 dBm at 850 MHz [2], and resistive FET mixers in SiC and GaN obtaining s of 35.7 dBm (SiC MESFET at 3 GHz) [3] and 36 dBm (AlGaN/GaN HEMT at 5 GHz) [4].…”

Section: Introductionmentioning

confidence: 91%

A highly linear double balanced Schottky diode S-band mixer

Sudow

Andersson

Nilsson

et al. 2006

IEEE Microw. Wireless Compon. Lett.

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A high-level double balanced SiC Schottky diode mixer in SiC monolithic mirowave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in-and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2 2.2 mm 2 .The mixer has a maximum IIP 3 of 38 dBm and IIP 2 of 58 dBm at 3.3 GHz, and a typical 1 dB of 23 dBm in the -band. The minimum conversion loss was 12 dBm at 2.4 GHz.The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments.Index Terms-High linearity, -band, Schottky, SiC monolithic microwave integrated circuit (MMIC).

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Section: Introductionmentioning

confidence: 91%

A highly linear double balanced Schottky diode S-band mixer

Sudow

Andersson

Nilsson

et al. 2006

IEEE Microw. Wireless Compon. Lett.

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“…Several GaN circuits have been demonstrated, such as high speed switches [2,3], low phase noise VCOs [4,5], power amplifiers [6], and passive mixers [4,7,8]. The previously reported GaN passive mixers had various conversion loss and linearity performances.…”

Section: Introductionmentioning

confidence: 99%

“…However, the resulting numerical scheme is much more expensive than the MOT algorithm [7]. Recently, a scheme was proposed that employed approximate prolate spheroidal wave functions as temporal basis functions [8]. As these functions are noncausal, extrapolation has to be carried out in each time step, which in turn requires more calculation.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of AlGaN/GaN HEMT resistive mixers

Chang

Lin

et al. 2007

Micro & Optical Tech Letters

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“…11,14,17 While the noise floor may rise a dB or two, the maximum output signal will rise by a much larger amount. The noise performance of current GaN FETs is not far from expectation.…”

Section: High-voltage Oscillator For Low Phase Noisementioning

confidence: 99%

“…11,14,17 This is the property of vacuum-tubes that has sustained their use in some applications such as microphone preamplification. 16 It would be very scientifically interesting to construct simple circuits analogous to the vacuum-tube versions whose dynamic range is crucial, and empirically compare performance.…”

Section: Vacuum-tube Replacementmentioning

confidence: 99%

Performance and applications of gallium-nitride monolithic microwave integrated circuits (GaN MMICs)

Scott

Parker

2007

Microelectronics: Design, Technology, and Packaging III

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The evolution of wide-bandgap semiconductor transistor technology is placed in historical context with other active device technologies. The relative rapidity of GaN transistor development is noted and is attributed to the great parallel activity in the lighting sector and the historical experience and business model from the III-V compound semiconductor sector. The physical performance expectations for wide-bandgap technologies such as Gallium-Nitride Field-Effect Transistors (GaN FETs) are reviewed. We present some device characteristics. Challenges met in characterising, and prospects for modeling GaN FETs are described. Reliability is identified as the final remaining hurdle facing would-be foundries. Evolutionary and unsurprising applications as well as novel and revolutionary applications are suggested. Novel applications include wholly monolithic switchmode power supplies, simplified tools for ablation and diathermy in tissue, and very wide dynamic range circuits for audio or low phase noise signal generation. We conclude that now is the time to embark on circuit design of MMICs in wide-bandgap technology. The potential for fabless design groups to capitalise upon design IP without strong geopraphic advantage is noted.

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Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors

Cited by 8 publications

References 0 publications

A highly linear double balanced Schottky diode S-band mixer

A highly linear double balanced Schottky diode S-band mixer

Analysis and design of AlGaN/GaN HEMT resistive mixers

Performance and applications of gallium-nitride monolithic microwave integrated circuits (GaN MMICs)

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