Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers

Akage, Y.; Kawano, Kenji; Oku, S.; Iga, R.; Okamoto, Hiroshi; Miyamoto, Yutaka; Takeuchi, Hiroaki

doi:10.1049/el:20010168

Cited by 63 publications

(12 citation statements)

References 2 publications

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“…Metalorganic chemical vapor deposition (MOCVD) is one of the essential technologies for manufacturing optoelectronic devices such as light emitting diodes, solid-state lasers, high efficiency multijunction solar cells, and heterojunction bipolar transistors [1][2][3][4][5]. The performance of these devices is affected in a major way by the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface

et al. 2006

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Section: Introductionmentioning

confidence: 99%

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface

et al. 2006

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“…), external modulators that can generate nearly transform-limited chirp-free waveforms are generally used. Two kinds of modulators are commonly used for high-rate intensity modulation: Mach-Zehnder modulators (MZMs), which are interferometric based devices; and semiconductor-based electro-absorption modulators (EAMs) (see, e.g., [274][275][276][277]). EAMs are compact, offer ease of integration with other elements such as lasers and semiconductor optical amplifiers (SOAs), and can be cost-effective for wide-band intensity modulation transmitters.…”

Section: Modulationmentioning

confidence: 99%

Laser communication transmitter and receiver design

Caplan

2007

J Optic Comm Rep

116

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Free-space laser communication systems have the potential to provide flexible, high-speed connectivity suitable for long-haul intersatellite and deep-space links. For these applications, power-efficient transmitter and receiver designs are essential for cost-effective implementation. State-of-the-art designs can leverage many of the recent advances in optical communication technologies that have led to global wideband fiber-optic networks with multiple Tbit/s capacities. While spectral efficiency has long been a key design parameter in the telecommunications industry, the many THz of excess channel bandwidth in the optical regime can be used to improve receiver sensitivities where photon efficiency is a design driver. Furthermore, the combination of excess bandwidth and average-power-limited optical transmitters has led to a new paradigm in transmitter and receiver design that can extend optimized performance of a single receiver to accommodate multiple data rates. This paper discusses state-of-the-art optical transmitter and receiver designs that are particularly well suited for average-power-limited photon-starved links where channel bandwidth is readily available. For comparison, relatively simple direct-detection systems used in short terrestrial or fiber optic links are discussed, but emphasis is placed on mature high-performance photon-efficient systems and commercially available technologies suitable for operation in space. The fundamental characteristics of optical sources, modulators, amplifiers, detectors, and associated noise sources are reviewed along with some of the unique properties that distinguish laser communication systems and components from their RF counterparts. Also addressed is the interplay between modulation format, transmitter waveform, and receiver design, as well as practical tradeoffs and implementation considerations that arise from using various technologies.

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“…The electro-absorption modulator (EAM) based on cross absorption modulation (XAM) is a leading candidate for a compact optical sampling gate with high cost efficiency [4,5,6,7,8]. A standard EAM for light source has MQW structure absorption layer because of its the low operating voltage and highly efficient characteristics [9,10], however it has drawbacks, such as high polarization dependency and narrow operating wavelength bandwidth for gating device. A bulk structure absorption layer is suitable to overcome these drawbacks [11,12].…”

Section: Introductionmentioning

confidence: 99%

Optical gating width variability using electrode parasitic capacitance

Yamada

Nagashima

Onuki

et al. 2016

IEICE Electron. Express

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Abstract:We developed an optical gating device using a bulk layer and high mesa ridge/BH hybrid structure with input power of 14.5 dBm for optical communication performance monitoring. The shortest gating width of 3.9 ps was obtained in all-optical sampling experiments. However, gated waveform distortion occurred due to superfluous carriers in absorption layer in case of low bias voltage and optical pumping power condition. We have successfully improved waveform quality by extension electric parasitic capacitance to draw out it, thus variable gating width depending on transmission speed has been realized.

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Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers

Cited by 63 publications

References 2 publications

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface

Laser communication transmitter and receiver design

Optical gating width variability using electrode parasitic capacitance

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