Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility

Prakash, Abhinav; Jalan, Bharat

doi:10.1002/admi.201900479

Cited by 33 publications

(16 citation statements)

References 140 publications

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“…Extending this scheme outside of transition metals to include the Sn‐based perovskites such as BaSnO 3 is of significant interest because the extended p ‐bands of Sn give rise to relatively wide bandgaps and large room‐temperature mobility, which is critical for room‐temperature applications, especially in the realm of power electronics. [ 46,47 ] Creating well‐controlled high‐quality interfaces and epitaxial contacts to the stannates is an open question for future work.…”

Section: Discussionmentioning

confidence: 99%

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

et al. 2021

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Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Toward this goal, both Ohmic‐ and Schottky‐like charge transfers at oxide/oxide semiconductor/metal interfaces are designed and experimentally validated. A method for predicting band alignment and charge transfer in ABO3 perovskites is utilized, where previously established rules for simple semiconductors fail. The prototypical systems chosen are the rare class of oxide metals, SrBO3 with B = V–Ta, when interfaced with the multifaceted semiconducting oxide, SrTiO3. For B = Nb and Ta, it is confirmed that a large accumulation of charge occurs in SrTiO3 due to the higher energy Nb and Ta states relative to Ti. This gives rise to a high mobility metallic interface, which is an ideal epitaxial oxide/oxide Ohmic contact. On the contrary, for B = V, there is no charge transfer into the SrTiO3 interface, which serves as a highly conductive epitaxial gate metal. Going beyond these specific cases, this work opens the door to integrating the vast phenomena of ABO3 perovskites into a wide range of practical devices.

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Section: Discussionmentioning

confidence: 99%

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

et al. 2021

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“…As materials at the heart of transparent electronics, transparent oxide semiconductors (TOS) with a wide band gap and high carrier mobility at room temperature have attracted tremendous interest due to their successful applications in logic devices, solar cells, display panels, and to mention a few. [1][2][3][4][5][6] In particular, the demonstration of high electron mobility (320 cm 2 V -1 s -1 at room temperature), wide band gap (~ 3.5 eV), and superior high-temperature thermal stability in La-doped BaSnO3 (LBSO) single crystals further boosts the study of perovskite TOS. [7][8][9][10] Perovskite oxides with a simple ABO3 chemical formula possess many remarkable properties such as superconductivity, 11,12 piezoelectricity/ferroelectricity, 13,14 and colossal magnetoresistance.…”

Section: Introductionmentioning

confidence: 99%

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Zhang

et al. 2021

APL Materials

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As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition.However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm 2 V -1 s -1 at the carrier density ~ 4.0 ×10 20 cm -3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 ×10 20 cm -3 ), the electron mobility value of 121 cm 2 V -1 s -1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.

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“…To study this effect, we use SrSnO 3 (SSO) thin films. This material belongs to a family of nonmagnetic alkaline-earth stannates (ASnO 3 ; A = Ca, Sr or Ba), which have gained significant interest in recent years owing, in large part, to their (ultra)wide bandgap and high room-temperature electron mobility. , These characteristics of stannates have paved the way for their use in transparent and high-power electronic applications. Motivated by this, significant progress has been made in synthesizing BaSnO 3 (BSO) and SSO films with atomic layer control using a variety of growth methods. − Although there are no studies of transport in bulk SSO single crystals, several exciting developments have occurred in SSO thin films including the demonstration of oxygen vacancy-induced room-temperature ferromagnetism, , high conductivity, a weak localization and Aronov–Altshuler electron–electron interaction, a large phase coherence length, and several field-effect devices − including those operating at GHz frequencies .…”

Section: Introductionmentioning

confidence: 99%

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

et al. 2021

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Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide films and heterostructures. Here, magnetotransport is investigated in a nonmagnetic La-doped SrSnO3 film. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ∼±3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeding 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the substrate. Given GdScO3 and similar substrates are commonly used, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for heterostructures utilizing these substrates.

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Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility

Cited by 33 publications

References 140 publications

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior

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Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility

Cited by 33 publications

References 140 publications

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

Design and Realization of Ohmic and Schottky Interfaces for Oxide Electronics

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior

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Hysteretic Magnetoresistance in a Non-Magnetic SrSnO₃ Film via Thermal Coupling to Dynamic Substrate Behavior