Wide bandgap Indium-doped SnO2 semiconductor prepared by sol-gel route: Multilayer fabrication and Low resistivity for solar cell application

Laghrib, Souad; Benhaliliba, M.; Adnani, Hania; Abdi, Djamila

doi:10.1007/s10971-023-06093-y

Cited by 5 publications

(1 citation statement)

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“…In particular, significant research has been conducted to control the electrical properties and improve reliability by doping SnO 2 with other materials, such as Al, In, Ta, etc. [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Conversion Efficiency in MAPbI3 Perovskite Solar Cells through Parameters Optimization via SCAPS-1D Simulation

Son,

Jeong

2024

Applied Sciences

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In this study, various factors affecting the efficiency of the MAPbI3 perovskite solar cell (PSC) were analyzed using the SCAPS-1D simulation program. The basic device analyzed in this study had a structure of ITO/TiO2/MAPbI3/Cu2O/Au. The thickness of each layer (electron transport layer (ETL), perovskite absorption layer (PAL), and hole transport layer (HTL)), PAL defect density and interface defect density were investigated as parameters. The optimized parameters that yielded the highest light conversion efficiency were an ETL (TiO2) thickness of 100 nm, a PAL (MAPbI3) thickness of 1300 nm, an HTL (Cu2O) thickness of 400 nm, a PAL defect density of 1014 cm−3, and an interface defect density of 1013 cm−3 for both absorber/ETL and absorber/HTL interfaces. The optimized PSC exhibited a maximum efficiency of 19.30%. These results obtained in this study are expected to contribute considerably to the optimization and efficiency improvement of perovskite solar cells using inorganic charge-carrier transport layers.

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Section: Introductionmentioning

confidence: 99%