Wide-Bandgap II–VI Semiconductors: Growth and Properties

Nanoscale piezoelectric response of ZnO nanowires measured using a nanoindentation technique

“…During all the piezoelectric measurements, the samples remained at constant room temperature. for bulk hexagonal ZnO [6,25]. No diffraction peaks of Zn or other impurities have been detected in the samples.…”

“…Zinc oxide (ZnO), a direct wide bandgap compound, is widely exploited and extensively used as a piezoelectric material because, comparing with similar II-VI tetrahedrally bonded wurtzite compound semiconductors like ZnS, CdS, and CdSe, it has at least double the piezoresponse [5][6]. The structure of ZnO consists of alternating planes in which each atom is tetrahedrally coordinated, with the O 2-and Zn 2+ ions stacked alternatively along the c-axis, and the center of gravity of the charges is at the center of the tetrahedron where positive and negative charges cancel each other.…”

Non-Toxic Buffer Layers in Flexible Cu(In,Ga)Se2Photovoltaic Cell Applications with Optimized Absorber Thickness

“…The base parameters for the CIGS cell structure with CdS buffer used for the simulation are shown in Table 1 [1,3,4,11,16,17]. The most important parameters of different buffer layer materials needed for the simulations are depicted in Table 2 [4,[17][18][19][20][21][22][23][24][25][26][27][28][29][30][31].…”

The Solid‐State Structures of Dimethylzinc and Diethylzinc

“…[6] Their high vapor pressures have led to extensive uses in metalorganic chemical vapor deposition (MOCVD) for the preparation of wide band gap II-VI semiconducting films (e.g. ZnS, ZnSe, ZnTe), [7] ZnO nanostructures, and as p-dopant precursors for III-V semiconductors (e.g. GaAs, InP, Al x Ga 1Àx As), which have numerous electronic and photonic applications.…”