Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Fortunato, Elvira; Barquinha, Pedro; Pimentel, Ana; Gonçalves, A.; Marques, A.; Martins, Rodrigo; Pereira, L.

doi:10.1063/1.1790587

Cited by 510 publications

(282 citation statements)

References 13 publications

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“…In recent years, applications of ZnO as switching devices and majority carrier devices in thin film transistors (TFTs) have attracted many researches [1][2][3]. Numerous techniques [4][5][6][7][8][9] have successfully been used to synthesize ZnO films.…”

Section: Introductionmentioning

confidence: 99%

RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

Li¹,

Furuta²,

Matsuda³

et al. 2007

Research Letters in Materials Science

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Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to 400• C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from 300• C. When annealing temperature was higher than 300• C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over 300• C would contribute to the formation of high quality ZnO films.

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Section: Introductionmentioning

confidence: 99%

RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

Li¹,

Furuta²,

Matsuda³

et al. 2007

Research Letters in Materials Science

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“…It has been extensively investigated for various applications such as varistors 1 , transparent transistors 2,3 , sensors 4 , and UV light emitting devices 5,6 . The prediction 7 that p-type ZnO and GaN may exhibit ferromagnetism characteristic above room temperature in response to doping with Mn has initiated intensive experimental work on a variety of doped diluted magnetic semiconductors (DMS) [8][9][10][11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Nanoparticles of ZnO Doped With Mn: Structural and Morphological Characteristics

et al. 2017

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In this study, the effects of dopant concentrations on the structural and morphological characteristics of Zn 1-x Mn x O powders (x= 0.025, 0.05, 0.075, and 0.1 mole) synthesized by the Pechini method has been investigated. The powder was characterized by X-ray diffraction (XRD), Brunauer-Emmet-Teller (BET) specific surface, energy dispersive X-ray (EDX), scanning electron microscopy (SEM) and Spectroscopy with Fourier transform (FTIR). An XRD analysis of the powder showed the formation of ZnO phase with a typical single phase wurtzite structure. The EDX analysis revealed Mn incorporated in the ZnO structure. The particle size calculated by BET ranged from 24 to 63 nm, confirming the nanometric size of the powder particles. The SEM analysis revealed irregular shaped particle agglomerates and the presence of nanosheets. From FTIR it was confirmed the wurtzite structure in ZnO and ZnO nanoparticles doped with Mn.

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“…After publication of these results, many ZnO TFTs were reported with improved performance and with lowered deposition temperatures suitable for flexible and transparent electronics applications [20][21][22][23]. As shown in Fig.…”

Section: Operation Of the Tfts And Important Device Parametersmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

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The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

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Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Cited by 510 publications

References 13 publications

RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

Nanoparticles of ZnO Doped With Mn: Structural and Morphological Characteristics

Overview of electroceramic materials for oxide semiconductor thin film transistors

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