Wide bandgap CIGS thin films via Ag-PDT to ameliorate the interface quality of CIGS/CdS heterojunction

Over 100 mV VOC Improvement for Rear Passivated ACIGS Ultra‐Thin Solar Cells

“…The obtained values are compatible with the trends obtained for ACIGS-based devices, presenting N CV values lower than the ones obtained for CIGS. [27,60,63,64] A V OC gain (ΔV OC ) of 36 mV for the Pass device might be estimated from the N CV values. [27] The 108 mV V OC increase is significantly far from the ΔV OC value.…”

Improved Sequentially Processed Cu(In,Ga)(S,Se)2 by Ag Alloying

“…[10][11][12][13][14] Leading to a lower melting temperature than the pure Cu compounds, [15] alloying with Ag offers the possibility to process the absorbers at lower temperature, which represents a great advantage from an industrial point of view. Alternatively, growing at similar temperatures as the Ag-free compound, grain size can be increased [15] and crystal defects may be reduced as simulated in Zhang et al [16] The presence of Ag in the crystal lattice has the following reported effects: an improved morphology is widely observed, translated into an increase of the grain size, [17] a smoother surface [14] is commonly obtained, and in low bandgap absorbers, deep defects may be passivated. [18] In addition, a reduction of the doping-hole density-and an improved current collection are systematically reported and attributed to a widening of the space charge region.…”

“…[ 10–14 ] Leading to a lower melting temperature than the pure Cu compounds, [ 15 ] alloying with Ag offers the possibility to process the absorbers at lower temperature, which represents a great advantage from an industrial point of view. Alternatively, growing at similar temperatures as the Ag‐free compound, grain size can be increased [ 15 ] and crystal defects may be reduced as simulated in Zhang et al [ 16 ] The presence of Ag in the crystal lattice has the following reported effects: an improved morphology is widely observed, translated into an increase of the grain size, [ 17 ] a smoother surface [ 14 ] is commonly obtained, and in low bandgap absorbers, deep defects may be passivated. [ 18 ] In addition, a reduction of the doping—hole density—and an improved current collection are systematically reported and attributed to a widening of the space charge region.…”